Ga-N熔体热力学性质及钠助熔剂法制备GaN单晶的研究进展  

Research Progress on Thermodynamic Properties of Ga-N Melt and Preparation of GaN Single Crystals by Na Flux Method

作　　者：刘甜甜[1] 怀俊彦 王书杰 顾占彪[4] 张文雅[4] 史艳磊 邵会民 Liu Tiantian;Huai Junyan;Wang Shujie;Gu Zhanbiao;Zhang Wenya;Shi Yanlei;Shao Huimin(Productivity Center of Jiangsu Province,Nanjing 210042,China;The 14 Research Institute,CETC,Nanjing 210039,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]江苏省生产力促进中心,南京210042 [2]中国电子科技集团公司第十四研究所,南京210039 [3]固态微波器件与电路全国重点实验室,石家庄050051 [4]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第7期597-608,共12页Semiconductor Technology

摘　　要：作为第三代半导体的关键材料之一,Ⅲ族氮化物在过去几十年中因其应用于光电子和微电子器件而得到了广泛的研究,如发光二极管(LED)、激光二极管(LD)和高电子迁移率晶体管(HEMT)。Na助熔剂法已成为生长高质量GaN晶体的重要技术之一。综述和讨论了Na助熔剂法GaN结晶的发展历程与最新技术,包括Ga-N的结晶热力学性质、熔体结构、助熔剂选择、单点籽晶技术、多点籽晶技术、孔隙与位错控制、形貌演化与生长条件优化等。最后,对比其他体GaN技术,展望了Na助熔剂法的挑战与机遇。As one of the key materials for third-generation semiconductors,group III nitrides have received extensive research in the past few decades due to their applications in optoelectronic and micro-electronic devices,such as light-emitting diodes(LEDs),laserdiodes(LDs)and highelectron mobility transistors(HEMTs).The Na flux method has become one of the important technologies for growing high-quality GaN crystals.The development process and latest technologies of Na flux method for GaN crystallization are reviewed and discussed,including the thermodynamic properties of Ga-N crystal-lization,melt structure,flux selection,single point seed technology,multi-point seed technology,pore and dislocation control,morphological evolution and optimization of growth conditions.Finally,compared with other bulk GaN technologies,the challenges and opportunities of the Na flux method are prospected.

关 键 词：氮化镓 体单晶 位错 晶体生长 钠助熔剂法 

分 类 号：TN304.23[电子电信—物理电子学]