一种X波段150W紧凑型功率放大器MMIC  

An X-Band 150 W Compact Power Amplifier MMIC

作　　者：杨卅男 李通 蔡道民[1] Yang Sanan;Li Tong;Cai Daomin(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第7期642-647,共6页Semiconductor Technology

摘　　要：基于0.35μm GaN高电子迁移率晶体管(HEMT)工艺平台设计了一款功率放大器单片微波集成电路(MMIC),采用双场板将HEMT的击穿电压提升至200 V;借助热电联合设计,优化HEMT的栅栅间距和末级HEMT布局,器件热阻降至0.55℃/W;输出匹配融合了功率分配/合成、阻抗变换和谐波调谐等功能,并通过多电容串联提高了击穿电压,增强了电路的鲁棒性;优化了版图布局,末级HEMT采用两两共地,并利用片上电感以缩短栅极偏置线,减小了芯片面积。最终,实现了饱和输出功率大于150 W、功率附加效率大于40%、功率增益大于22 dB的X波段功率放大器MMIC,其尺寸为3.8 mm×5.3 mm。该功率放大器MMIC可广泛应用于通信领域。A power amplifier MMIC was designed based on the 0.35μm GaN high electron mobility transistor(HEMT)process platform,and the breakdown voltage of the HEMT was increased to 200 V by using the dual field plate.With the thermoelectric combination design,the gate spacing of the HEMT and the last stage HEMT layout were optimized,and the thermal resistance of the device was reduced to 0.55℃/W.The output matching combined the functions of power dividing/combining,impedance con-version and harmonic tuning,and adopted the multi-capacitor series to increase the breakdown voltage and enhance the robustness of the circuit.The layout was optimized,and the last stage HEMT used both common ground and on-chip inductors to shorten the gate bias line and reduce the chip area.Finally,the X-band power amplifier MMIC is achieved with the saturation output power of greater than 150 W,the power additional efficiency of greater than 40%and the power gain of greater than 20 dB,and the amplifier chip size is 3.8 mmx5.3 mm.The power amplifier MMIC can be widely used in communication fields.

关 键 词：紧凑型 X波段 功率放大器 功率附加效率 热阻 单片微波集成电路(MMIC) 

分 类 号：TN32[电子电信—物理电子学]