磁控溅射玫瑰金靶材的刻蚀行为  

Etching behavior of rose gold target during magnetron sputtering

作　　者：袁军平[1] 陈令霞[1] 潘成强 黄宇亨[1] 周翔 林善伟 朱佳宜 YUAN Junping;CHEN Lingxia;PAN Chengqiang;HUANG Yuheng;ZHOU Xiang;LIN Shanwei;ZHU Jiayi(Jewelry Institute,Guangzhou Panyu Polytechnic,Guangzhou 511483,China)

机构地区：[1]广州番禺职业技术学院珠宝学院,广东广州511483

出　　处：《电镀与涂饰》2024年第6期85-92,共8页Electroplating & Finishing

基　　金：广州市教育局产学研结合项目(202235327);广东省教育厅重点领域专项项目(2022ZDZX3062);广东省教育厅产教融合创新平台项目(粤教科函[2021]8号)。

摘　　要：[目的]磁控溅射玫瑰金膜层相比于电镀工艺具有突出的环保优势,但很少有关于磁控溅射靶材刻蚀行为的研究报道。[方法]以Au85玫瑰金制作平面溅射靶材,进行真空磁控溅射镀膜。研究了靶电流、功率密度、磁场布置等对靶材表面刻蚀行为的影响。[结果]靶电流和功率密度较低时辉光稳定,溅射过程平稳;靶材粒子会优先沿着某个晶面逐层溅射出来,形成阶梯状直线条纹;靶材表面形成V形刻蚀沟槽,刻蚀区斜坡与靶面法向夹角为75°~76°。随着靶电流和功率密度的增大,溅射过程偶有弧光放电现象发生,刻蚀区表面形成乳突状显微形貌;靶电流过高时,靶材在短时间内就会出现熔穿。靶座的磁场布置存在端部效应,使刻蚀槽的深度和宽度存在不均匀的现象。[结论]为提高贵金属平面靶的利用率,应改善磁场布置,并将功率密度控制在出现弧光放电的阈值内。[Introduction]Magnetron sputtering of rose gold film has outstanding environmental advantages over electroplating.However,there are few research reports about etching behavior of target during magnetron sputtering.[Method]Magnetron sputtering was conducted with a planar target made of Au85 rose gold under vacuum condition.The effects of target current,power density,and magnetic field arrangement on the etching behavior of target were studied.[Result]The glow and sputtering process were stable at low target current and power density.The target particles were sputtered preferentially layer by layer along a crystal surface,forming stepped linear stripes.V-shaped grooves were formed on target surface,and the angle between the slope of etched area and the normal direction of target surface was about 75°-76°.With the increasing of target current or power density,arc discharge occurred occasionally during sputtering,and mastoid-like micromorphology was formed on the etched area.The target material melted in a short time when the target current was too high.The depth and width of etching grooves were nonuniform due to the endpoint effect caused by the magnetic field arrangement of target base.[Conclusion]In order to improve the utilization of planar precious metal target,the magnetic field layout should be modified,and the power density should be controlled lower than the threshold of arc discharge.

关 键 词：磁控溅射 玫瑰金 靶材 刻蚀 微观形貌 

分 类 号：TQ153.18[化学工程—电化学工业]