High K材料对CMOS图像传感器性能的影响分析  

Analysis of the Impact of High K Materials on the Performance of CMOS Image Sensors

作　　者：王文轩 WANG Wenxuan(Smart Sens(Shanghai)Technology Co.,Ltd.,Shanghai 200233,China)

机构地区：[1]思特威(上海)电子科技股份有限公司,上海200233

出　　处：《集成电路应用》2024年第5期55-57,共3页Application of IC

摘　　要：阐述BDIT结构表面不同厚度的Ta_(2)O_(5)以及Al_(2)O_(3)材料对传感器光学以及电学性能的影响。实验结果表明,改变Ta_(2)O_(5)厚度对传感器QE以及高温性能影响较大,改变Al_(2)O_(3)厚度主要会影响高温性能。通过调整Ta_(2)O_(5)以及Al_(2)O_(3)厚度,可以改善图像传感器高温性能,同时可以改变传感器的QE特性。This paper describes the effects of Ta_(2)O_(5) and Al_(2)O_(3) materials with different thicknesses on the surface of the BDIT structure on the optical and electrical properties of the sensor.Experimental results show that changing the thickness of Ta_(2)O_(5) has great impact on the sensor QE and hightemperature performance,while changing the thickness of Al_(2)O_(3) mainly affects the high-temperature performance.By adjusting the thickness of Ta_(2)O_(5) and Al_(2)O_(3),the high-temperature performance of the image sensor can be improved,and the QE characteristics of the sensor can also be changed.

关 键 词：集成电路 背照式图像传感器 背面深沟槽隔离 暗电流 

分 类 号：TN405[电子电信—微电子学与固体电子学] TP212[自动化与计算机技术—检测技术与自动化装置] TP391.41[自动化与计算机技术—控制科学与工程]