压阻式压力传感器硅电阻条浅槽刻蚀的研究  

Study on Etching of Silicon Resistance Strip Shallow Groove of Piezoresistive Pressure Sensor

作　　者：王天靖 梁庭[1] 雷程[1] 王婧 冀鹏飞 WANG Tianjing;LIANG Ting;LEI Cheng;WANG Jing;JI Pengfei(Key Laboratory of Instrumentation Science&Dynamic Measurement(North University of China),Ministry of Education,Taiyuan 030051)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《舰船电子工程》2024年第4期199-202,共4页Ship Electronic Engineering

摘　　要：MEMS压阻式压力传感器的电阻条刻蚀效果对传感器的性能及高温环境下工作寿命起着至关重要的作用。采用SPTS深硅刻蚀机以SF6为刻蚀气体,C4F8为保护气体进行刻蚀实验。通过改变刻蚀气体通入时长、保护气体通入时长以及射频功率进行参数匹配,根据台阶仪和SEM电镜的观察数据对刻蚀效果进行评估,最终确定了刻蚀气体流量25 sccm,刻蚀气体通入的时长为2.5 s;保护气体流量50 sccm,保护气体的通入时长为2.5 s,射频功率为2 500 W的刻蚀条件。该条件下刻蚀速率为1.54μm/loop。刻蚀均匀性为2.9%.The resistance bar etching effect of MEMS piezoresistive pressure sensor plays an important role in the performance of the sensor and the working life in high temperature environment.The etching experiment is carried out by SPTS deep silicon etch⁃ing machine with SF6 as etching gas and C4F8 as shielding gas.The parameters are matched by changing the etching gas inlet time,the shielding gas inlet time and the RF power.The etching effect is evaluated according to the observation data of the step meter and the SEM electron microscope.Finally,the etching gas flow rate is 25 sccm and the etching gas inlet time is 2.5 s.The protection gas flow rate is 50 sccm,the protection gas is 2.5 s,and the RF power is 2500 W.Under this condition,the etching rate is 1.54μm/loop.The etching uniformity is 2.9%.

关 键 词：压力传感器 电阻条 深硅刻蚀 刻蚀 刻蚀速率 均匀性 

分 类 号：S951.43[农业科学—水产养殖]