高质量GaN基HEMT专利技术综述  

Overview of High Quality GaN Based HEMT Patent Technology

作　　者：丁宁 DING Ning(Electrical Invention Examination Department of the Patent Office,CNIPA,Beijing 100088,China)

机构地区：[1]国家知识产权局专利局电学发明审查部,北京100088

出　　处：《专利代理》2024年第2期64-70,共7页Patent Agency

摘　　要：研究了高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件领域中占据主流地位的GaN基HEMT相关专利,并重点研究了该领域的专利技术发展趋势和布局。以大规模GaN膜和小尺寸GaN膜为主要切入点,针对GaN膜的材料质量所涉及的专利的技术路径以及重点技术进行深入研究,对不同路径的技术进行比较,为GaN基HEMT领域的技术发展以及专利布局提供参考。This article investigates the mainstream GaN based High Electron Mobility Transistor(HEMT) related patents in the field of HEMT devices,and focuses on the development trend and layout of patent in this field.Taking large-scale GaN films and small-sized GaN films as the key points,this article goes into the technical paths and key technologies involved in the quality of GaN films,compares the technologies of different paths,and provides reference for the technological development and patent layout in the GaN based HEMT field.

关 键 词：HEMT GAN 高质量GaN膜 

分 类 号：G306[文化科学]