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作 者:郭琦 尤向阳[2] GUO Qi;YOU Xiangyang(College of Applied Engineering,Henan University of Science and Technology;Sanmenxia Polytechnic,Sanmenxia 472000,China)
机构地区:[1]河南科技大学应用工程学院 [2]三门峡职业技术学院智能制造学院,河南三门峡472000
出 处:《三门峡职业技术学院学报》2024年第2期134-140,共7页Journal of Sanmenxia Polytechnic
摘 要:反应离子刻蚀是聚合物光波导制备过程中的一项关键工艺。通过改变射频功率RF、反应腔室压强以及混合气体组成与配比等参数研究对波导刻蚀的影响因素,利用台阶仪、金相显微镜和扫描电子显微镜(SEM)观测波导形貌,找到了表面毛糙度小、侧壁平滑、垂直度优和刻蚀速率适中的最优刻蚀工艺参数,研究成果为制备低损耗的聚合物光波导器件奠定了良好的基础。Reactive ion etching is a key technology in the process of preparation of polymer optical waveguide.Based on change of RF power,gas pressure,gas composition and ratio to study the effect of etching of waveguide,the use of level gauge thickness,metallo graphic microscope and SEM observation waveguide section,surface and lateral wall,found the small surface coarse degree,wall smooth,verticality and etching rate moderate optimal etching process parameters.The experimental results show that the etching rate and RF power were positively correlated,and larger with the increase of the pressure,and as the CHF3 in mixed gas of the total increase and decrease;Surface coarse degree of will and with the increase of RF power decreases after bigger first,and the pressure was positively related to relationship,along with the increase in the amount of CHF3 in the mixed gas after the first small amplitude increases dramatically reduce,the final leveling off;The perpendicularity of the waveguide wall will decreases as the RF power showed a trend of small greaten before they are smaller,and the pressure appear significantly larger small amplitude decreasing trend after the first,with the increase of CHF3 content in mixed gas bigger before leveling off.When etching for polymer waveguide CHF3 than Ar has better passivation protection.The experimental results are the preparation of polymer optical waveguide with low loss devices laid a good foundation.
分 类 号:TN41[电子电信—微电子学与固体电子学]
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