碳化硅真空纳米电子器件技术分析  

Technological Analysis of Silicon Carbide Based Vacuum Nanoscale Electronic Devices

作　　者：任大鹏 李兴辉[3] 韩攀阳 仲子琪 REN Da-peng;LI Xing-hui;HAN Pan-yang;ZHONG Zi-qi(China Nanhu Academy of Electronics and Information Technology,Jiaxing 314002,China;School of Electronic Information and Electrical Engineering,Shanghai Jiaotong University,Shanghai 200240,China;National Key Laboratory of Science and Technology on Vacuum Electronics,Beijing Vacuum Electronics Research Institute,Beijing 100015,China)

机构地区：[1]中国电子科技南湖研究院,浙江嘉兴314000 [2]上海交通大学电子信息与电气工程学院,上海200240 [3]中国电子科技集团公司第十二研究所微波电真空器件国家级重点实验室,北京100015

出　　处：《真空电子技术》2024年第3期63-75,共13页Vacuum Electronics

摘　　要：新兴的真空纳米电子器件兼具固态器件集成电路和传统真空电子器件的优势。但和硅器件同工艺、同片集成的现状,限制了其在恶劣环境的应用。使用宽禁带半导体碳化硅材料制备真空纳米电子器件,可在耐辐射基础上兼具抗高温特性,使该器件具备良好的综合优势。文章分析了硅器件及集成电路发展中面临的问题,回顾了真空纳米电子器件的发展历史,介绍了碳化硅材料的相对优势以及SiC基真空纳米电子器件研究现状,并对该器件发展及应用前景进行了分析。Emerging vacuum nanoscale electronic devices combine the advantages of solid-state device integrated circuits and traditional vacuum electronic devices.However,the same process and integration platform with silicon devices limits their wider application in harsh environment.The use of wide bandgap semiconductor material silicon carbide in the preparation of vacuum nanoscale electronic devices can provide both radiation resistance and high temperature resistance,giving the device excellent comprehensive advantages.The problems faced in the development of silicon devices and integrated circuits are analyzed,the development history of vacuum nanoscale electronic devices is reviewed,the relative advantages of silicon carbide materials and the current research status of silicon carbide based vacuum nanoscale electronic devices are introduced,and the development and application prospects of the devices are analyzed.

关 键 词：碳化硅 真空器件 纳米器件 抗温 抗辐射 

分 类 号：TP11[自动化与计算机技术—控制理论与控制工程]