高精度薄厚膜异构HTCC基板制备工艺  

Preparation Process of High Precision Thin and Thick Film Heterogeneous HTCC Substrate

作　　者：张鹤 杨鑫 谢岳 杨振涛 刘林杰[1] Zhang He;Yang Xin;Xie Yue;Yang Zhentao;Liu Linjie(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第7期150-155,共6页Micronanoelectronic Technology

摘　　要：针对高温共烧陶瓷(HTCC)基板高平整度、高密度封装需求,提出了一种高精度薄厚膜异构HTCC基板的制备方法,并对其关键工艺进行研究。结合陶瓷基板精密研磨工艺与薄膜制备工艺,该方法在大幅降低原有HTCC基板的平面度、粗糙度的同时,实现HTCC表面精密布线。测量结果表明,薄厚膜HTCC基板的平面度低至15μm,表面布线最小线宽低至10μm,与传统陶瓷基板平面度(30μm)与最小线宽(50μm)相比均有较大改善。在此基础上,研究了不同种子层厚度对薄厚膜异构HTCC基板结合力的影响。结果表明当钛钨层厚度为150 nm时,薄膜层和陶瓷基板结合力高达9.27 gf(1 gf=0.0098 N)。In order to meet the requirements of high flatness and high density packaging of high temperature co-fired ceramic(HTCC)substrate,the preparation method of high precision thin and thick film heterogeneous HTCC substrate was presented,and its key process was studied.Combined with the ceramic substrate precision grinding process and the film preparation process,the method greatly reduced the flatness and roughness of the original HTCC substrate,and realized the HTCC surface precision wiring.The measured results show that the flatness of the thin and thick film HTCC substrate is as low as 15μm,and the minimum line width of the surface wiring is as low as 10μm,which is greatly improved compared with the flatness(30μm)and the minimum line width(50μm)of the traditional ceramic substrate.On this basis,the effect of different seed layer thickness on the bonding strength of the thin and thick film HTCC substrate was studied.The results show that when the thickness of titanium-tungsten layer is 150 nm,the bonding force between the film layer and ceramic substrate is as high as 9.27 gf(1 gf=0.0098 N).

关 键 词：多层共烧陶瓷 薄膜金属化 封装基板 异构集成 键合强度 

分 类 号：TN405[电子电信—微电子学与固体电子学]