PECVD Si_(3)N_(4)薄膜淀积工艺  

Process of Silicon Nitride Thin Film Deposited by PECVD

作　　者：ZHANG Qi 张奇 刘婷婷 韩孟序 商庆杰[1] 宋洁晶[1] ZHANG Qi;LIU Tingting;HAN Mengxu;SHANG Qingjie;SONG Jiejing(The 13th Research Institute of CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《电子工艺技术》2024年第4期48-50,共3页Electronics Process Technology

摘　　要：采用等离子增强化学气相淀积(PECVD)制备氮化硅(Si_(3)N_(4))薄膜作为光电器件的重要介质膜,其性能好坏直接影响器件的性能。淀积的Si_(3)N_(4)薄膜主要用作光电探测器的扩散膜和增透膜,击穿电压是该器件中比较重要的测试参数。应力、击穿电压变化量则是器件的重要指标。通过试验对比和调试,发现不同工艺Si_(3)N_(4)介质膜应力和击穿电压变化量不同,最终实现了低应力、稳定击穿电压的膜层生长。300℃/150 W无氨Si_(3)N_(4)的压应力为50 MPa,在光照10 min后的击穿电压变化量小于0.1 V@50 V。The performance of silicon nitride prepared by plasma-enhanced chemical gas phase deposition as an important dielectric fi lm of an important photoelectric device directs the performance of the photoelectric device.The Si_(3)N_(4)deposited by PECVD is mainly used as the diffusion fi lm and the penetration fi lm of the electrophotonic detector.The breakdown voltage introduced by the membrane layer are the most important test parameters in the device.Stress and breakdown voltage change are important indicators of devices.Through experimental comparison and debugging,it is found that Si_(3)N_(4)membrane stress and breakdown voltage change of different processes are different,and finally the growth of membrane layer with low stress and stable breakdown voltage is realized.Deposited at 300℃and 150 W,the compressive stress of this Si_(3)N_(4)fi lm is 50 MPa and the change of breakdown voltage is less than 0.1 V@50 V after 10 min of illumination.

关 键 词：PECVD Si_(3)N_(4) 应力 击穿电压 

分 类 号：TN605[电子电信—电路与系统]