基于GaN材料的器件辐照效应的评估方法  

An Evaluation Method of Irradiation Effects for GaN-based Devices

作　　者：甄子新 冯慧 王冲[1] 张楠 冯春[2] ZHEN Zixin;FENG Hui;WANG Chong;ZHANG Nan;FENG Chun(China Aerospace Science&Industry Corp Defense Technology R&T Center,Beijing 100854;Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]中国航天科工防御技术研究试验中心,北京100854 [2]中科院半导体所半导体材料科学重点实验室,北京100083

出　　处：《舰船电子工程》2024年第5期181-184,共4页Ship Electronic Engineering

基　　金：国家重点研发计划青年科学家项目(编号:2022YFB3607600)资助。

摘　　要：论文提出了一种基于GaN材料的器件辐照效应的评估方法,从GaN基器件的辐照效应导致的退化出发,涵盖基于结构的材料退化的辐照效应评估和基于电学性能的辐照效应评估,实现对器件辐照效应的全面评估。此外,论文选取具体的器件进行实践验证,证实了所提出的评估方法的可行性和有效性。In this paper,a method for evaluating the irradiation effect of GaN-based devices is proposed.Starting from the degradation caused by the irradiation effect,the proposed method consists of the evaluation of the irradiation effect of material degra⁃dation based on device structure and the evaluation of irradiation effect based on electrical properties,so as to achieve a comprehen⁃sive evaluation of the irradiation effect of the device.In addition,this paper selects specific devices for practical verification,which strongly supports the feasibility and effectiveness of the proposed evaluation method.

关 键 词：GAN 辐照效应 评估方法 

分 类 号：G449.7[哲学宗教—心理学]