GaN HEMT源漏通道区电阻的自热和准饱和效应模型  

Modeling of Source/Drain Access Region Resistance in GaN HEMT Considering Self-Heating and Quasi-Saturation Effect

作　　者：姚若河[1] 姚永康 耿魁伟[1,2] YAO Ruohe;YAO Yongkang;GENG Kuiwei(School of Microelectronics,South China University of Technology,Guangzhou 511442,Guangdong,China;Sino-Singapore International Joint Research Institute,Guangzhou 510700,Guangdong,China)

机构地区：[1]华南理工大学微电子学院,广东广州511442 [2]中新国际联合研究院,广东广州510700

出　　处：《华南理工大学学报（自然科学版）》2024年第7期1-8,共8页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家重点研发计划项目(2018YFB1802100);广东省重点领域研发计划项目(2019B010143003)。

摘　　要：GaN HEMT在栅极与源极和漏极之间存在一段通道区域,在等效电路模型中通常等效为一电阻,称为源漏通道区电阻R_(D,S)。准确构建GaN HEMT R_(D,S)模型,对于分析GaN HEMT直流和射频特性,构建GaN HEMT大信号模型具有十分重要的意义。本研究给出考虑自热和准饱和效应的R_(D,S)模型。首先由源漏通道区温度T_(CH)与耗散功率P_(diss)的关系,推导出非线性自热效应模型。进一步基于准饱和效应和Trofimenkoff模型,给出源漏通道区电子漂移速度与电场强度的关系表达式,构建非线性R_(D,S)模型。在环境温度Tamb=300~500 K时,源漏通道区二维电子气2DEG面密度n_(S,acc)(T_(CH))和迁移率μ_(acc)(T_(CH))随T_(CH)的升高而下降,这导致低偏置条件下的源漏通道区电阻R_(D0,S0)随T_(CH)呈非线性增长。将本研究和文献报道的R_(D,S)模型与TCAD(Technology Computer Aided Design)仿真数据进行对比,结果显示:本研究与文献报道的漏通道区电阻RD模型的平均相对误差分别为0.32%和1.78%,均方根误差(RMSE)分别为0.039和0.20Ω;RS模型的平均相对误差分别为0.76%和1.73%,RMSE分别为0.023和0.047Ω。与文献报道的实验数据进行对比,结果显示:本研究与文献RD模型的平均相对误差分别为0.91%和1.59%,RMSE分别为0.012和0.015Ω;RS平均相对误差分别为1.22%和2.77%,RMSE分别为0.0015和0.0034Ω。本研究提出的R_(D,S)模型具有更低的平均相对误差和均方根误差,能够更加准确地表征GaN HEMT线性工作区R_(D,S)随漏源电流I_(DS)的变化。可将本模型用于器件的设计优化,也可作为Spice模型用于电路仿真。The region between gate and source/drain is called source/drain access region resistances(R_(D,S))in GaN HEMT equivalent circuit model.Accurately constructing the source/drain access region resistance(R_(D,S))model is of great significance for analyzing the DC and RF characteristics and building a comprehensive large-signal model for GaN HEMTs.This paper presented an R_(D,S)model considering self-heating and quasi-saturation effects.Firstly,the nonlinear self-heating effect model was derived based on the relationship between the temperature of the source/drain access region(T_(CH))and the dissipated power(P_(diss)).Furthermore,based on the quasi-saturation effect and Trofimenkoff model,a nonlinear R_(D,S)model was constructed.Under low bias conditions,the decrease of 2DEG and mobility with increasing T_(CH)results in the increase of R_(D,S)with T_(CH)at ambient temperatures(Tamb)ranging from 300 to 500 K.At constant Tamb,R_(D,S)presented a nonlinear increasing trend with the increase of bias.The results show that the average relative errors of the RD models in this paper and in the literature are 0.32%and 1.78%respectively,and the root mean square errors(RMSE)are 0.039 and 0.20Ωrespectively.The mean relative errors of RS model are 0.76%and 1.73%respectively,and RMSE are 0.023 and 0.047Ωrespectively.Compared with the experimental data reported in the literature,the results show that the average relative errors of the RD model in this paper and that in the literature are 0.91%and 1.59%respectively,and the RMSE are 0.012 and 0.015Ωrespectively.The mean relative errors of RS are 1.22%and 2.77%respectively,and RMSE were 0.0015 and 0.0034Ωrespectively.The proposed model with lower mean relative error and root mean square error,is able to more accurately characterize the variation of R_(D,S)with the drain-source current(I_(DS))in the linear operating region of GaN HEMTs.

关 键 词：源漏通道区电阻 GaN HEMTs 自热效应 准饱和效应 

分 类 号：TN386[电子电信—物理电子学]