1.55μm高功率单横模半导体激光器的研制  

Research and Fabrication of 1.55μm High Power Single Transverse Mode Laser

作　　者：薛正群 池炳坤 陈玉萍 XUE Zhengqun;CHI Bingkun;CHEN Yuping(School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China;Xiamen Xinnuo Communication Technology CO.,Ltd.,Xiamen 361011,China)

机构地区：[1]福州大学先进制造学院,福建泉州362251 [2]厦门市芯诺通讯科技有限公司,福建厦门361011

出　　处：《发光学报》2024年第7期1189-1195,共7页Chinese Journal of Luminescence

基　　金：福建省科技计划(2021H4016);泉州市科技计划(2021G13);福建省雏鹰计划青年拔尖人才项目(2022173)。

摘　　要：1.55μm高功率半导体激光器广泛应用于长距离主干网光网络、无人驾驶等领域,在应用系统中更高的激光出光功率有利于提升系统的工作距离和接收端的信噪比;随着光电子集成和共封装光学的快速发展,其高光电集成密度要求激光器具备低功耗等性能。本文通过优化激光器外延P-InP掺杂,激光器室温下串联电阻从3.2Ω降低至2.2Ω,器件电阻性能优于相同结构对比器件,300 mA电流下器件电功耗从510 mW降低至430 mW。进一步采用锥形波导结构提高激光器增益体积,测试结果显示,锥形波导结构使激光器出光功率提升17%以上,同时器件电功耗无明显增加;室温低电流下器件最高光电转换效率接近50%,与相关研究报道结果优值相当;远场测试结果显示,激光器水平方向发散角有效降低,同时器件光束质量未发生明显变化。实验结果为面向光电子集成应用的低功耗高功率半导体激光器提供了研究基础。1.55μm high power laser diodes are widely used in long-distance optical communication networks,un⁃manned driving,and other fields.The higher output power of the laser can effectively increase the transmission dis⁃tance and improve the signal-to-noise ratio of the system.As the rapid development of photonic integration and copackaged optics,high optical and electrical integration density requires lasers to have low power consumption perfor⁃mance.By optimizing the p-type profile and epi-growth of the laser epi-wafer,the series resistance of the lasers at room temperature was reduced from 3.2Ωto 2.2Ω,and the electrical power consumption was decreased from 510 mW to 430 mW,at a current of 300 mA.The resistance of the laser is better than the device prepared by the for⁃eign company epi-wafer with the same structure.The taper waveguide was further adopted to increase the gain vol⁃ume of the lasers.The results show that the taper structure increased the laser output power by more than 17%,while the electrical power of the device did not increase significantly.The highest photoelectric conversion efficiency of the device at room temperature and low current is close to 50%,which is comparable to the results reported in related studies.The far field results show that the lateral divergence angle of the laser is effectively reduced,and the beam quality of the device does not change significantly.The experimental results provide a research basis for low power consumption high-power semiconductor lasers for optoelectronic integrated applications.

关 键 词：1.55μm InP/InGaAsP 高功率激光器 P型掺杂 锥形波导 

分 类 号：O472[理学—半导体物理]