Review of the SiC LDMOS power device  

作　　者：Ziwei Hu Jiafei Yao Ang Li Qi Sun Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo 

机构地区：[1]College of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts andT elecommunications,Nanjing 210023,China [2]National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China [3]Nantong Institute of Nanjing University of Posts and Telecommunications,Nantong 226000,China

出　　处：《Journal of Semiconductors》2024年第8期4-17,共14页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.62074080);the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20211104 and BK20201206);the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126).

摘　　要：Silicon carbide(SiC),as a third-generation semiconductor material,possesses exceptional material properties that significantly enhance the performance of power devices.The SiC lateral double-diffused metal–oxide–semiconductor(LDMOS)power devices have undergone continuous optimization,resulting in an increase in breakdown voltage(BV)and ultra-low specific on-resistance(Ron,sp).This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices,including the trench-gate technology,reduced surface field(RESURF)technology,doping technology,junction termination techniques and so on.The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.

关 键 词：SIC LDMOS specific on-resistance breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]