高性能512×2元线列InGaAs短波红外探测器  

High-Performance 512×2-Element Linear InGaAs Short-Wavelength Infrared Focal Plane Detector

作　　者：朱琴[1] 范明国 宋欣波 齐浩泽 方莉媛 管涛 龚晓霞[1] ZHU Qin;FAN Mingguo;SONG Xinbo;QI Haoze;FANG Liyuan;GUAN Tao;GONG Xiaoxia(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2024年第7期826-830,共5页Infrared Technology

摘　　要：针对色选行业对高均匀性、低暗电流、低盲元率的线列InGaAs短波红外探测器的迫切需求,本文基于MOCVD生长的n-i-n型InP/InGaAs/InP外延材料,采用扩散、钝化膜制备、电极生长等工艺,制备了512×2元线列InGaAs短波红外探测器。通过优化器件结构及钝化膜制备工艺,器件暗电流得到了有效的抑制;通过对倒装互联工艺参数进行优化,实现了高可靠性、高连通率的512×2元线列探测器的制备。室温下(25℃)对探测器组件进行测试,其峰值探测率为1.13×10^(12) cm×Hz^(1/2)/W,暗电流密度为12.8 nA/cm^(2),有效像元率≥99.5%,响应非均匀性低至0.63%。To meet with the ongoing demand for high uniformity,low dark current and low-blind pixels of linear InGaAs short-wavelength-infrared focal plane detector in color separation industry,based on MOCVDgrown n-i-n type InP/InGaAs/InP epitaxial materials,a 512×2-element linear InGaAs short-wavelengthinfrared focal plane detector was fabricated using diffusion techniques,preparation of the passivation layer,and growth of the electrode.The dark current of this detector was effectively suppressed by optimizing the structure of the detector and the passivation layer technique,Moreover,high reliability and low-blind pixels were achieved by optimizing the parameters of flip-chip interconnection.The detector assembly was tested.The measurement results show a peak detectivity of 1.13×10^(12) cm×Hz^(1/2)/W,dark current density of 12.8 nA/cm2,effective pixel rate higher than 99.5%,and response non-uniformity as low as 0.63%at room temperature(25℃).

关 键 词：INGAAS 钝化 暗电流 倒装互联 

分 类 号：TN215[电子电信—物理电子学]