不同能量质子辐照CMOS图像传感器的单粒子瞬态效应研究  

Single Event Transient Effect of CMOS Image Sensor Irradiated by Protons With Different Energies

作　　者：李钰 文林[2] 郭旗[2] LI Yu;WEN Lin;GUO Qi(School of Optics and Photonics,Beijing Institute of Technology,Beijing 100081,China;Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China)

机构地区：[1]北京理工大学光电学院,北京100081 [2]中国科学院新疆理化技术研究所,乌鲁木齐830011

出　　处：《现代应用物理》2024年第3期112-119,共8页Modern Applied Physics

基　　金：中科院西部之光计划资助项目(2020-XBQNXZ-004)。

摘　　要：针对空间环境宽能谱质子辐射导致的CMOS图像传感器单粒子效应问题,开展了不同能量质子辐照试验,研究了质子辐照导致CMOS图像传感器单粒子效应的异常现象、图像特征及参数性能变化规律。试验表明,质子辐照主要导致CMOS图像传感器出现明显的单粒子瞬态(single event transient,SET)效应现象,包括SET亮斑和亮线。通过对比不同条件下的试验结果,分析了质子能量、积分时间等变化对SET亮斑覆盖像素情况、信号水平的影响规律,并结合TCAD仿真工具,分析了SET亮斑的产生机制。研究结果表明:SET亮斑灰度水平和覆盖像素数目均随辐照质子能量增加而增大;SET亮斑覆盖像素最大灰度值、平均灰度值随CMOS图像传感器积分时间增加而增大,通过调节CMOS图像传感器的积分时间,可以明显改变SET亮斑的特征和器件成像性能;从TCAD软件仿真的微观物理过程获得了SET亮斑随积分时间变化的机制,支持了对试验结果的分析和判断。研究结果可为CMOS图像传感器空间辐射效应评估、抗辐射加固提供试验和理论参考。In this paper,the single event effect(SEE) of CMOS image sensor caused by proton radiation of wide energy spectrum in space environment is studied based on 4 transistors pinned photo-diode pixel scientific CMOS image sensor.Experiments of proton irradiation of different energies are carried out.The abnormal phenomenon,image characteristics and parameter performance of single event effect(SEE) of CMOS image sensor irradiated by proton are studied.The results show that the proton irradiation mainly causes single event transient(SET) effect on CMOS image sensor,concluding SET bright spots and lines.By comparing the experimental results under different conditions,the influence law of proton energy,integration time and other conditions on the SET bright spots covering pixel and signal is analyzed,and the generation mechanism of the SET bright spots is analyzed using TCAD software.The results show that the gray level of SET bright spots and the number of covered pixels increase with the increase of proton energy.The maximum gray value and average gray value of SET bright spot cover pixels increase with the increase of integration time of CMOS image sensor.By adjusting the integration time of CMOS image sensor,the characteristics of SET effect bright spots and imaging performance of sensor can be significantly changed.The mechanism of SET bright spots variation with integration time is obtained from the microphysical process simulated by TCAD software,which supports the analysis and judgement of the experimental results.The research results will provide important experimental and theoretical support for the space radiation effects evaluation and anti-radiation hardening of CMOS image sensor.

关 键 词：质子辐照 空间环境 CMOS图像传感器 单粒子效应 瞬态效应 

分 类 号：TL81[核科学技术—核技术及应用] TN386[电子电信—物理电子学]