一种注入增强型快速SOI-LIGBT新结构研究  

Novel Injection-Enhanced Fast SOI-LIGBT Structure

作　　者：黄磊[1] 李健根[1] 陆泽灼 俞齐声 陈文锁 HUANG Lei;LI Jiangen;LU Zezhuo;YU Qisheng;CHEN Wensuo(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China;School of Electrical Engineering,Chongqing University,Chongqing 400044,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]重庆大学电气工程学院,重庆400044

出　　处：《微电子学》2024年第2期277-281,共5页Microelectronics

基　　金：集成电路与微系统全国重点实验室基金资助项目(6142802200510);国家重点研发计划资助项目(2018YFB2100100);重庆市自然科学基金资助项目(cstc2020jcyj-msxmX0572);中央高校基本科研业务费资助项目(2020CDJ-LHZZ-076)。

摘　　要：薄顶层硅SOI(Silicon on Insulator)横向绝缘栅双极型晶体管(Lateral Insulated-Gate Bipolar Transistor, LIGBT)的正向饱和电压较高,引入旨在减小关断态拖尾电流的集电极短路结构后,正向饱和电压进一步增大。提出了一种注入增强型(Injection Enhancement, IE)快速LIGBT新结构器件(F-IE-LIGBT),并对其工作机理进行了理论分析和模拟仿真验证。该新结构F-IE-LIGBT器件整体构建在薄顶层硅SOI衬底材料上,其集电极采用注入增强结构和电势控制结构设计。器件及电路联合模拟仿真说明:新结构F-IE-LIGBT器件在获得较小正向饱和电压的同时,减小了关断拖尾电流,实现了快速关断特性。新结构F-IE-LIGBT器件非常适用于SOI基高压功率集成电路。Thin-top silicon-on-insulator(SOI)lateral insulated-gate bipolar transistors(LIGBTs)have a high forward saturation voltage drop.When a shorted collector structure is introduced to reduce the trailing current of the turning-off state,the forward saturation voltage drop increases further.A novel fast-switching LIGBT(F-IE-LIGBT)device based on injection enhancement(IE)is proposed in this study,and its working mechanism is theoretically analyzed and verified through a simulation.The F-IE-LIGBT device is built on a thin-top SOI substrate,and its collector is designed using injection-enhanced and potential control structures.Combined simulation results show that the F-IE-LIGBT device can obtain a smaller forward saturation voltage drop,reduce the trailing current of the turning-off state,and achieve a fast turn-off characteristic.The F-IE-LIGBT device is highly suitable for SOI-based high-voltage power integrated circuits.

关 键 词：SOI 横向绝缘栅双极型晶体管 快速关断 拖尾电流 正向饱和电压 

分 类 号：TN342.3[电子电信—物理电子学]