非对称电阻场板场效应器件击穿特性仿真分析  

Breakdown Simulation Analysis of Asymmetric Resistive Field Plate Field Effect Devices

作　　者：姚传建 肖添 李孝权 何悦 谭开洲[1,2] YAO Chuanjian;XIAO Tian;LI Xiaoquan;HE Yue;TAN Kaizhou(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China;National Key Laboratory of Integrated Circuits and Microsystems,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]集成电路与微系统全国重点实验室,重庆400060

出　　处：《微电子学》2024年第2期293-297,共5页Microelectronics

摘　　要：利用TCAD仿真研究一种二维紧耦合电阻场板电流调制原理下的物理模型与最优化结构。通过优化关键工艺与材料参数,改善器件漂移区尖峰电场,最终在相同漂移区掺杂下击穿电压较一维PN结理论击穿电压提升273%,相同归一化击穿电压10%变化范围下,漂移区电荷变化允许冗余范围比现有传统PN超结拓宽15倍。相较于对称电阻场板场效应器件,在现有工艺下非对称优化电阻场板场效应器件能够更好的实现结构小型化与高密度的设计。Using TCAD simulation to study the physical model and optimal structure of a two-dimensional tightly coupled resistance field plate current modulation principle.By optimizing key process and material parameters,the peak electric field in the drift region of the device was improved.Finally,under the same drift region doping,the breakdown voltage increased by 273%compared to the theoretical breakdown voltage of a one-dimensional PN junction.Under the same normalized breakdown voltage variation range of 10%,the allowable redundancy of charge variation in the drift region was expanded by 15 times compared to the existing traditional PN superjunction.Compared to symmetric resistive field-effect devices,asymmetric optimized resistive field-effect devices can better achieve structural miniaturization and high-density design under existing processes.

关 键 词：二维紧耦合电阻场板 击穿电压 TCAD 

分 类 号：TN386[电子电信—物理电子学]