环境温度对HfO_(2)铁电存储器的质子辐照效应影响研究  

Proton Radiation Effect Based on HfO_(2) Ferroelectric Memory

作　　者：朱旭昊 袁亦辉 黄铭敏 马瑶 毕津顺 许高博[4] 龚敏[1,2] 杨治美[1,2] 李芸 ZHU Xuhao;YUAN Yihui;HUANG Mingmin;MA Yao;BI Jinshun;XU Gaobo;GONG Min;YANG Zhimei;LI Yun(Key Laboratory of microelectronics,College of Physics,Sichuan University,Chengdu 610064,P.R.China;School of Integrated Circuits Key Laboratory of microelectronics,College of Physics,Sichuan University,Chengdu 610064,P.R.China;Institute of Integrated Circuits,Guizhou Normal University,Guizhou 550025,P.R.China;State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,P.R.China)

机构地区：[1]四川大学物理学院微电子技术四川省重点实验室,成都610064 [2]四川大学辐射物理及技术教育部重点实验室,成都610064 [3]贵州师范大学集成电路研究院,贵州550025 [4]中国科学院微电子研究所集成电路制造技术国家重点实验室,北京100029

出　　处：《微电子学》2024年第2期330-337,共8页Microelectronics

基　　金：强脉冲辐射环境模拟与效应国家重点实验室专项经费资助(SKLIPR2109)。

摘　　要：基于HfO_(2)的铁电随机存取存储器(FeRAM)具有功耗低、存取速度快,易于小型化,抗干扰能力强等优势,在航天航空领域有广袤的发展空间。然而,FeRAM在太空环境下的抗辐照性能尚未得到全面的研究。研究了W/TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN铁电存储器在常温和高温环境下经5 MeV质子辐照后的电学特性和铁电畴结构变化。通过电学和压电响应力显微镜(PFM)手段表征发现,在常温质子辐照后,电容器的介电常数(ε_(r))和剩余极化强度(P_(r))值均增大,器件的铁电性能提升,常温高注量质子辐照有利于存储器在太空环境中工作,但随着辐照时环境温度升高,HZO存储器的铁电性能下降,漏电流增大,铁电存储器的各项性能明显退化。Because of advantages such as low power consumption,high access speed,easy miniaturization,and strong anti-jamming ability,HfO_(2)-based ferroelectric random access memory(FeRAM)has a wide development space in the aerospace and aviation fields.However,the irradiation resistance of FeRAM in space environments has not been comprehensively studied.In this study,the electrical properties and ferroelectric domain structure changes of W/TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric memories are evaluated after irradiation with 5 MeV protons at room and high temperature environments.Characterization using electrical and piezoresponse force microscopy(PFM)reveals that,after proton irradiation at room temperature,the values of the dielectric constant(ε_(r))and residual polarization strength(P_(r))of the capacitor increase,and the ferroelectric performance of the device improves.The irradiation of high-injection protons at room temperature is conducive to the operation of the memory in the space environment.However,with the increase in the irradiation ambient temperature,the ferroelectric performance of the HZO memory decreases,the leakage current increases,and the ferroelectric performance of the memory degrades significantly.

关 键 词：HfO_(2) 铁电存储器 质子辐照 温度 

分 类 号：TN384[电子电信—物理电子学]