基于微电子机械系统加工的光刻模拟工艺研究  

Research on Photolithography Simulation Process Based on MEMS Machining

作　　者：杨永杰 康正阳 尹春山 YANG Yongjie;KANG Zhengyang;YIN Chunshan(Liaoning Technical University,Fuxin 123000)

机构地区：[1]辽宁工程技术大学,阜新123000

出　　处：《现代制造技术与装备》2024年第7期18-20,共3页Modern Manufacturing Technology and Equipment

摘　　要：微机电系统(Micro Electro Mechanical System,MEMS)器件的制造离不开光刻工艺,而光刻工艺的优化对于提升MEMS器件的性能至关重要。针对MEMS加工中的光刻工艺展开研究,设计一套完整的光刻模拟工艺流程,包括光刻胶涂覆、曝光、显影、刻蚀和去胶等关键步骤。通过系统的实验和表征,优化各工艺参数,获得线宽低至0.5μm、深宽比大于20、侧壁角度接近90°的高质量硅微结构。所提出的MEMS光刻模拟工艺和优化方法,为高性能MEMS器件的制造提供了重要的理论和实践依据。The fabrication of Micro Electro Mechanical System(MEMS)devices cannot be done without lithography process,and the optimization of lithography process is very important to improve the performance of MEMS devices.A complete set of photolithographic simulation process was designed to study the photolithographic process in MEMS processing,including the key steps of photoresist coating,exposure,development,etching and degluing.Through systematic experiments and characterization,high quality silicon microstructures with linewidth as low as 0.5μm,depth-to-width ratio greater than 20 and sidewall Angle close to 90°were obtained by optimizing the process parameters.The proposed MEMS lithography simulation process and optimization method provide an important theoretical and practical basis for the manufacture of high-performance MEMS devices.

关 键 词：微机电系统(MEMS) 光刻工艺 硅微结构 

分 类 号：TH-39[机械工程]