Zn、Si掺杂GaAs纳米线的发光性能  

Optical performance of Zn, Si doped GaAs nanowires

作　　者：郎天宇 王海珠 于海鑫 王登魁 马晓辉 LANG Tianyu;WANG Haizhu;YU Haixin;WANG Dengkui;MA Xiaohui(Research Institute of Chongqing,Changchun University of Science and Technology,Chongqing 401135,China;State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学重庆研究院,重庆401135 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《红外与激光工程》2024年第7期234-241,共8页Infrared and Laser Engineering

基　　金：重庆自然科学基金项目(cstc2021jcyjmsxmX1060,CSTB2022NSCQ-MSX0401);吉林省科学技术发展计划(20210201089GX,20210201030GX)。

摘　　要：为探明掺杂对硅基GaAs纳米线发光性能的影响机理,采用金属有机物化学气相沉积(MOCVD)技术,以气-液-固(VLS)生长机制为基础,在硅基上实现了Zn和Si掺杂的GaAs纳米线制备。通过变温、变功率光致发光(PL)等表征手段发现,未掺杂与Si掺杂GaAs纳米线具有更优异的发光质量,带隙随温度的变化规律符合Varshni公式,发光来源为自由激子复合(α>1)。而Zn掺杂纳米线的发光峰出现极大展宽,发光来源为缺陷或杂质相关跃迁(α<1),峰位随激发功率的变化规律与P^(1/3)成正比。结合透射电子显微镜(TEM)测试结果进一步表明,Zn掺杂纳米线中出现了纤锌矿/闪锌矿(WZ/ZB)混合结构,是导致GaAs纳米线发光质量变差的主要原因。Objective Nanowires (NWs),being one-dimensional (1D) semiconductor materials,hold considerable value due to their distinctive properties in various nanoscale optoelectronic devices.Silicon based optoelectronic technology has high compatibility with microelectronic processes,and the research and development of heteroepitaxial III-V group compounds on silicon are rapidly advancing,enabling the fabrication of silicon photonic chips.Considering the application of doped nanowires in p-n junctions and optoelectronic integrated devices,as well as the rapid development of the micro-optoelectronic industry,the research on Si based doped Ga As nanowires is of great significance.Under the influence of the tide to combine the III-V group compounds with silicon,Zn,Si doped GaAs NWs have been successfully grown on Si/SiO_2 substrates using MOCVD technology.In order to explore the Zn,Si doping effects on the optical performance of GaAs NWs,variable temperature and power density photoluminescence (PL) measurement have been conducted on each sample.This manuscript will provide technical reserves and theoretical support for the further research and development of Ga As nanowires.Methods Zn,Si doped and undoped GaAs NWs have been grown via MOCVD technology under some growth conditions.The only distinguishment between three grown samples are the addition of two different dopants which are SiH_4 and DEZn.The growth morphology of three samples were detected through SEM measuremen(Fig.1) in order to verify the successful growth of nanowires.The optical performance of Zn,Si doped nanowires was contrasted through low temperature PL spectrum (Fig.2).The luminescence origins of each sample were distinguished through 15 K variable power density PL tests (Fig.3).Subsequently,variable temperature PL tests were performed on each sample to verify the degree of fitting between peak position altering pattern with temperature and theoretical values (Fig.4).In the end,necessary TEM measurement was conducted on Zn doped sample to explore its structu

关 键 词：材料 发光性能 金属有机物化学气相沉积 掺杂GaAs纳米线 

分 类 号：O4723[理学—半导体物理]