PEN衬底氧化镓基柔性紫外探测器的制备与性能研究(特邀)  

Preparation and Properties of PEN Substrate Gallium Oxide Based Flexible Ultraviolet Detector(Invited)

作　　者：丁悦 皇甫倩倩 左清源 梁金龙 弭伟[1] 王迪[1] 张兴成[2] 刘振 何林安 DING Yue;HUANGFU Qianqian;ZUO Qingyuan;LIANG Jinlong;MI Wei;WANG Di;ZHANG Xingcheng;LIU Zhen;HE Linan(School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Tianjin EF Semiconductor Technology Co.,LTD.,Tianjin 300382,China)

机构地区：[1]天津理工大学集成电路科学与工程学院,天津300384 [2]中国科学院微电子研究所,北京100029 [3]天津英孚瑞半导体科技有限公司,天津300382

出　　处：《光子学报》2024年第7期49-57,共9页Acta Photonica Sinica

基　　金：天津市自然科学基金(No.22JCQNJC01370)。

摘　　要：针对传统硬性衬底无法弯折的问题,采用聚萘二甲酸乙二醇酯(PEN)衬底制备柔性紫外光电探测器。柔性衬底具有的抗曲折性,能够提升探测器的鲁棒性,并且能让其适用于各种复杂形态的应用场景,同时减少占用空间,有助于整个电路的集成化。实验使用磁控溅射镀膜工艺首先在PEN衬底上生长氧化镓薄膜,并在氧化镓薄膜上生长氧化铟锡电极,在室温下成功制备柔性氧化镓紫外光电探测器,器件响应波长处于小于280 nm的深紫外区。将器件弯折20000次后其暗电流无显著变化,光电流增大,保持了良好的紫外光探测性能,探测器上升时间和衰减时间分别为0.24 s/0.74 s和0.10 s/0.71 s,其电流-时间特性曲线呈现周期性稳定,表明即使经过多次弯折,柔性氧化镓紫外探测器仍然具有良好的光电探测性能。The emerging wide-band gap semiconductor material gallium oxide is a very promising solar blind ultraviolet detector material,which has the advantages of good stability,simple preparation process,low production cost,high temperature and high pressure resistance,etc.And the preparation materials used as flexible photodetectors can maintain good performance even when they are twisted and extended into complex non-planar shapes.However,due to the limitation of substrate temperature(generally less than 200℃),it is difficult to directly grow high-quality gallium oxide films on flexible substrates,which seriously affects the improvement and promotion of the performance of flexible ultraviolet detectors.At present,most of the transparent conductive thin flexible substrates Ga2O3 reported were prepared by magnetron sputtering method,so in order to improve reliability,we also adopted magnetron sputtering method in this experiment.The experimental process of preparing the flexible gallium oxide Ultraviolet(UV)detector on the PEN substrate is planned as follows:First,a Ga2O3 adhesive layer is formed by presputtering with DE500 magnetron sputtering equipment,and on this basis,a Ga2O3 thin film with a thickness of about 160 nm is further deposited.Finally,ITO electrode layer with thickness of about 150 nm was grown on the thin film by magnetron sputtering through the mask.The process parameters of growing Ga2O3 film on PEN substrate and ITO electrode on Ga2O3 film were set.It can be seen from the results of the structure characterization of the thin films that the XRD patterns of the PEN substrate and the PEN substrate growing gallium oxide thin films are compared,and there is only a strong diffraction peak at 25.9°in the curve,but no other diffraction peaks.This indicates that the prepared GAN films have amorphous or microcrystalline structure.The full spectrum scanning of 0~1200 eV and fine scanning of Ga 2p and O 1s were obtained.The atomic ratio of Ga and O in the prepared film is about 0.67,which is very close to the

关 键 词：半导体光电探测器 柔性紫外探测器 射频磁控溅射 氧化镓 聚萘二甲酸乙二醇酯 氧化铟锡 

分 类 号：TN23[电子电信—物理电子学] TQ132.41[化学工程—无机化工]