原子层沉积Al_(2)O_(3)钝化对InAs/InGaAsSbⅡ类超晶格发光特性的影响  

Effect of Atomic Layer Deposition Al_(2)O_(3)Passivation on the Luminescence Properties of InAs/InGaAsSb Type-Ⅱ Superlattices

作　　者：项超 王登魁 方铉 房丹 闫昊 李金华 王晓华 杜鹏 XIANG Chao;WANG Dengkui;FANG Xuan;FANG Dan;YAN Hao;LI Jinhua;WANG Xiaohua;DU Peng(State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;College of Electrical Engineering,University of South China,Hengyang 421000,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022 [2]南华大学电气工程学院,衡阳421000

出　　处：《光子学报》2024年第7期85-93,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.62074018,62174015,62275032);吉林省科技发展项目(Nos.20230508053RC,20210509061RQ);吉林省自然科学基金(Nos.20210101473JC,20210101150JC)。

摘　　要：提出一种基于干法刻蚀与原子层沉积相结合的钝化方法,采用干法刻蚀去除InAs/InGaAsSb超晶格表面及端面固有的氧化层,利用原子层沉积Al_(2)O_(3)薄膜钝化刻蚀表面,对钝化前后光致发光光谱的表征研究其发光性能与长期稳定性。处理后超晶格的As 3d谱中As-O键相关的峰消失表明其表面的氧化物被有效去除。样品的发光强度与激发光功率之间的拟合系数α从1.17减小为1.02,表明激子主导的发光占比增加。连续五天的红外光谱测试发现,处理后样品发光强度降低为原来的89%,而未处理样品的发光强度降低为原来的76%,表明处理后超晶格表现出更好发光稳定性。本研究为提升InAs/InGaAsSb超晶格性能、促进其光电探测领域的应用提供参考。As an emerging mid-infrared semiconductor material,InAs/InGaAsSb superlattice possesses a wide working range covering the infrared spectrum from 2~30μm,holding promising potential for applications in fields of infrared imaging.Compared to traditional InAs/GaSb superlattices,InAs/InGaAsSb superlattice has the advantages of high electronic effective mass,low Auger recombination efficiency,and long carrier lifetimes,making it a potential material for designing third-generation infrared photodetectors.Hence,the study on InAs/InGaAsSb superlattice has become the current research hotspot.However,the surfaces and cross-sections of InAs/InGaAsSb superlattices are easily oxidated in air,resulting in the formation of gallium oxide and arsenious oxide.These oxides act as non-radiative recombination centers,reducing minority carrier lifetimes and severely limiting the performance improvement of infrared photodetectors.Therefore,it is of great significance for surface treatment to remove surface oxides and reduce surface state density in InAs/InGaAsSb superlattice materials.Recently,research on the passivation of InAs/InGaAsSb superlattices focuses solely on surface treatment.However,the cross-sections,consisting of distinct InAs and InGaAsSb structures,respectively,exhibit heightened susceptibility to being oxidated.Consequently,it is necessary to remove the inherent oxide layers from the cross-section by etching and passivate the surfaces to prevent further oxidation.Accordingly,this paper proposes a passivation technique integrating dry etching and atomic layer deposition.Dry etching is employed to remove the inherent oxide layers from the surface and cross-section of InAs/InGaAsSb superlattices,followed by the deposition of an Al_(2)O_(3)thin film through atomic layer deposition to passivate the etched surfaces.This approach aims to enhance the emission performance and long-term optical stability of InAs/InGaAsSb superlattices.In order to characterize the crystal quality of the InAs/InGaAsSb superlattice,the double-cryst

关 键 词：InAs/InGaAsSb超晶格 钝化 Al_(2)O_(3) 原子层沉积 发光特性 

分 类 号：O472[理学—半导体物理]