超薄锡掺杂氧化镓结合高k栅介质:硅基兼容的4英寸功率场效应晶体管阵列  

Ultrathin Sn-doped Ga_(2)O_(3)for power field-effect transistors:Si-compatible 4-inch array with high-k gate dielectric

作　　者：刘子淳 李佳诚 杨惠霞 杨涵 黄元 张逸韵 黎沛涛 马远骁 王业亮 Zi-Chun Liu;Jia-Cheng Li;Hui-Xia Yang;Han Yang;Yuan Huang;Yi-Yun Zhang;Pui-To Lai;Yuan-Xiao Ma;Ye-Liang Wang(School of Integrated Circuits and Electronics and Yangtze Delta Region Academy,Beijing Institute of Technology,Beijing 100081,China;Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong 999077,China;R&D Center for Solid-state Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

机构地区：[1]School of Integrated Circuits and Electronics and Yangtze Delta Region Academy,Beijing Institute of Technology,Beijing 100081,China [2]Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong 999077,China [3]R&D Center for Solid-state Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Science Bulletin》2024年第12期1848-1851,共4页科学通报（英文版）

基　　金：supported by the National Key R&D Program of China(2023YFB3611700);the National Natural Science Foundation of China(92163206,62101044,12321004)。

摘　　要：Gallium oxide(Ga_(2)O_(3)),a novel ultrawide-bandgap(UWBG)semiconductor,has attracted considerable attention owing to its large bandgap of up to 4.9 eV,a high breakdown electric field of 8 MV/cm,and a high Baliga's figure of merit exceeding 3000[1,2].These remarkable properties strongly support its potential applications in power electronics,extreme environmentresistance devices,and solar-blind detectors[1–3].

关 键 词：功率场效应晶体管 高K栅介质 氧化镓 

分 类 号：TQ133.51[化学工程—无机化工] TN386[电子电信—物理电子学]