200 mm SiC外延炉及同质外延工艺研究  

200 mm SiC Epitaxy Reactor and the Study of 4H-SiC Homogeneous Epitaxy Process

作　　者：谢添乐 李苹 杨宇 巩小亮 巴赛 陈国钦 万胜强 XIE Tianle;LI Ping;YANG Yu;GONG Xiaoliang;BA Sai;CHEN Guoqing;WAN Shengqiang(The 48^(th) Research Institute of CETC,Changsha 410111,China)

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2024年第4期11-16,29,共7页Equipment for Electronic Products Manufacturing

基　　金：湖南省科技重大专项十大技术攻关项目“8英寸SiC外延装备关键技术”(2023GK1020)。

摘　　要：目前SiC产业正由150 mm(6英寸)向200 mm(8英寸)转型,为满足行业对大尺寸、高质量SiC同质外延片的迫切需求,采用自主研制的200 mmSiC外延生长设备在国产衬底上成功制备出150 mm、200 mm 4H-SiC同质外延片,并开发了适用于150 mm及200 mm的同质外延工艺,其中外延生长速率可大于60μm/h,在满足高速外延的同时,外延片质量优异,其中150 mm、200 mm SiC外延片厚度均匀性都可控制在1.5%以内,浓度均匀性均小于3%,致命缺陷密度小于0.3颗/cm2,外延表面粗糙度均方根Ra小于0.15 nm,各核心工艺指标均处于行业先进水平。At present,the SiC industry is transforming from 150 mm(6-inch)to 200 mm(8-inch).In order to meet the urgent demand of the industry for large size and high quality SiC homogeneous epitaxial wafer,the 150 mm and 200 mm 4H-SiC homogeneous epitaxial layers are successfully prepared by self-developed 200 mm SiC epitaxy reactor.Meanwhile,the homogeneous epitaxy process is explored for both 150 mm and 200 mm SiC wafer.The epitaxial growth rate is faster than 60μm/h,and the epitaxial wafer quality is also excellent while the high-speed epitaxial growth rate.At present,the thickness uniformity of 150 mm and 200 mm SiC epitaxial wafers both can be controlled within 1.5%,the concentration uniformity is less than 3%,the killer defect density is less than 0.3 ea./cm2,and the epitaxial surface roughness RMS Ra is less than 0.15 nm,which are at the advanced level of the industry.

关 键 词：碳化硅 200 mm外延炉 化学气相沉积 同质外延 

分 类 号：TN304.054[电子电信—物理电子学]