硅片双面研磨过程数学模拟及分析  

Mathematical Simulation and Analysis of Double-sidedGrinding Process for Silicon Wafers

作　　者：吴建光 WU Jianguang(The 46^(th) Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2024年第4期41-44,共4页Equipment for Electronic Products Manufacturing

摘　　要：建立了双面研磨过程中硅片表面上的一点相对于研磨盘的运动模型;利用数学软件,模拟出不同速度下的运动轨迹。轨迹和实验结果表明,在其他双面研磨工艺不变的情况下,改变研磨机4个部分(游轮片的公转速度ωh、研磨大盘的转速ωp、内齿轮转速ωs和外齿轮转速ωr)的转速,对硅片表面的平整度有很大的影响,特别是边缘部分的局部平整度。优化4个转速,可以显著改善硅片表面的平整度和局部平整度。Established a motion model of a point on silicon wafer surface relative to the grinding disc during the double-sided grinding process.Using mathematical software,simulate motion trajectories at different speeds.The trajectory and experimental results indicate that,while keeping the other double-sided grinding processes unchanged,changing the four recipes of the grinding machine(the revolution speed of the cruise plateωh,the grinding plate speedωp,the internal gear speedωs and the external gear speedωr).The rotational speed has a significant impact on the flatness of the silicon wafer surface,especially the local flatness of the edge parts.Optimizing four rotational speeds can significantly improve the surface smoothness and local smoothness of silicon wafers.

关 键 词：硅片 双面研磨 数学模拟 轨迹 

分 类 号：TN305.2[电子电信—物理电子学]