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作 者:宗世强 张健[1] 徐全国 ZONG Shiqiang;ZHANG Jian;XU Quanguo(School of Mechanical and Power Engineering,Shenyang University of Chemical Technology,Shenyang 110142,China)
机构地区:[1]沈阳化工大学机械与动力工程学院,沈阳110142
出 处:《机械工程师》2024年第8期45-48,53,共5页Mechanical Engineer
基 金:国家科技型中小企业技术创新基金(2022210101000301)。
摘 要:在磁控溅射设备上,通过改变工艺参数在硅片上镀20 nm左右的纳米铜膜,研究了斜溅射靶的不同角度变化和直溅射靶的溅射温度对纳米铜薄膜的性能影响。使用SEM、EDS、台阶仪、四探针设备对铜薄膜的表面形貌、均匀性、元素种类与含量以及导电特性进行检测。结果显示:在斜溅射条件下,随着靶的角度α增大,铜薄膜膜厚随之增加,薄膜表面整体变得更好,铜薄膜的均匀性和导电性提高;在直溅射条件下,温度参数对薄膜厚度基本没有影响,但提高了薄膜的致密性,温度越高,其均匀性越好,而导电性与薄膜厚度呈正相关,因此其导电性基本无变化。Copper nanofilms of about 20 nm are coated on silicon wafers by varying the process parameters on magnetron sputtering equipment,and the effects of different angle variations of the oblique sputtering target and the sputtering temperature of the straight sputtering target on the properties of the copper nanofilms are investigated.The surface morphology,uniformity,elemental species and content,and conductive properties of the copper films are examined using SEM,EDS,step meter,and four-probe equipment.The results show that under oblique sputtering conditions,the film thickness increases with the increase of the target angleα,the film surface becomes better overall,and the uniformity and conductivity of the copper films are improved;under direct sputtering conditions,the temperature parameter basically has no effect on the film thickness,but improves the denseness of the films,and the higher the temperature,the better the uniformity,while the conductivity is positively correlated with the film thickness,so its conductivity is basically unchanged.
分 类 号:TB34[一般工业技术—材料科学与工程]
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