水平结构氢终端金刚石MOSFET的研究进展  

Research Progress on Horizontal Structure Hydrogen⁃terminated Diamond MOSFET

作　　者：尹灿 邢艳辉 张璇 张丽 于国浩[2] 张学敏[2] 张宝顺[2] YIN Can;XING Yanhui;ZHANG Xuan;ZHANG Li;YU Guohao;ZHANG Xuemin;ZHANG Baoshun(Key Laboratory of Opto‑electronics Technology,Ministry of Education Faculty of Information Technology,Beijing University of Technology,Beijing,100124,CHN;Nanofabrication Facility,Suzhou Institute of Nano‑Tech and Nano‑Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu,215123,CHN)

机构地区：[1]北京工业大学信息学部光电子技术教育部重点实验室,北京100124 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,江苏苏州215123

出　　处：《固体电子学研究与进展》2024年第3期185-195,共11页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60908012,61575008,61775007,62074011,62134008)。

摘　　要：氢等离子体处理后的金刚石表面具有导电性,室温下二维空穴气(Two-dimensional hole gas,2DHG)面密度可达1013 cm-2,因此利用氢终端金刚石制备的场效应晶体管成为研究重点。本文基于金刚石优异的物理性质,介绍了两种氢终端金刚石2DHG的形成机理,以耗尽型氢终端金刚石MOSFET为例提出稳定2DHG及提高器件性能的方法,总结增强型氢终端金刚石MOSFET的三种实现方法,并综述氢终端金刚石功率器件研究现状、面临的问题以及对未来发展的展望。When the diamond surface is treated by hydrogen plasma,an accumulation layer of two-dimensional hole gas(2DHG)will be formed with a density of about 1013 cm-2.Therefore,fieldeffect transistors fabricated using hydrogen-terminated diamond(H-diamond)have become the focus of research.This paper is based on the outstanding physical properties of diamond and mainly discuss⁃es two formation mechanisms of H-diamond 2DHG,methods to stabilize 2DHG and improve device performance based on the depletion mode H-diamond MOSFET device structure,and three approach⁃es to realize enhancement mode H-diamond MOSFET.Furthermore,the current research status,the challenges faced and prospects for future development are summarized.

关 键 词：氢终端金刚石 二维空穴气 金属氧化物半导体场效应晶体管 耗尽型 增强型 金属氧化物 

分 类 号：TN301[电子电信—物理电子学] O471[理学—半导体物理]