用于GaN CMOS集成技术的p型GaN欧姆接触研究  

Study of Ohmic Contacts to p⁃type GaN for GaN CMOS Technology

作　　者：潘传奇 王登贵 周建军[1] 胡壮壮 严张哲 郁鑫鑫[1,2] 李忠辉 陈堂胜[1,2] PAN Chuanqi;WANG Denggui;ZHOU Jianjun;HU Zhuangzhuang;YAN Zhangzhe;YU Xinxin;LI Zhonghui;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid‑state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2024年第3期196-200,251,共6页Research & Progress of SSE

基　　金：国家自然科学基金青年科学基金资助项目(62104218)。

摘　　要：通过金属叠层结构、蒸发-合金工艺条件的优化调整,实现了低接触电阻率、高稳定的p型GaN欧姆接触技术,并研究分析了电极金属在合金过程中的扩散行为。测试结果显示,改进后的p型GaN欧姆接触电阻为11.9Ω·mm,比导通电阻率为3.9×10^(-5)Ω·cm^(2),同时在250℃以内的高温环境中欧姆特性不会发生退化。在此基础上,采用低损伤凹槽栅刻蚀、叠层栅介质沉积等工艺研制出增强型p沟道GaN晶体管器件,器件的阈值电压为-1.2 V(V_(GS)=VDS,IDS=10μA/mm),漏极电流密度为-5.6 mA/mm,导通电阻为665Ω·mm(V_(GS)=-8 V,V_(DS)=-2 V)。优异的p型GaN欧姆接触技术为高性能GaN p沟道器件的研制以及GaN CMOS集成技术的小型化、智能化、高速化发展奠定了重要基础。By optimizing the metal structures and evaporation-annealing conditions,low contact resistivity and high stability p-GaN ohmic contact was achieved,and the diffusion behavior of elec⁃trode metals during the alloying process was analyzed.The test results demonstrate that the optimized ohmic contact to p-type GaN exhibits a contact resistance of 11.9Ω·mm and a specific contact resistivi⁃ty of 3.9×10^(-5)Ω·cm^(2).Furthermore,the contact characteristics do not degrade in high-temperature en⁃vironments below 250℃.Based on these findings,an enhancement-mode p-channel GaN device was fabricated utilizing low-damage gate recess etching and dual-layer gate dielectric deposition tech⁃niques,yielding a threshold voltage of-1.2 V(VGS=VDS,IDS=10μA/mm),a maximum drain cur⁃rent of-5.6 mA/mm,and an on-resistance of 665Ω·mm(V_(GS)=-8 V,V_(DS)=-2 V).This outstand⁃ing p-type ohmic contact technique establishes a crucial foundation for the development of high-perfor⁃mance GaN p-channel devices and contributes to the advancement of miniaturization,intelligence,and high-speed capabilities in GaN CMOS technology.

关 键 词：GaN CMOS P型GAN p沟道器件 欧姆接触 低接触电阻 

分 类 号：TN386[电子电信—物理电子学]