增强型p⁃GaN栅HEMT器件的抗辐照性能研究  

Study on the Radiation Effects of Enhancement⁃mode p⁃GaN Gate HEMT Devices

作　　者：胡壮壮 王登贵 李雪 周建军 孔月婵[1,2] 陈堂胜 HU Zhuangzhuang;WANG Denggui;LI Xue;ZHOU Jianjun;KONG Yuechan;CHEN Tangsheng(National Key Laboratory of Solid‑state Microwave Devices and Circuits,Nanjing,210016,CHN;Nanjing Electronic Devices Institute,Nanjing,210016,CHN)

机构地区：[1]固态微波器件与电路全国重点实验室,南京210016 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2024年第3期201-205,共5页Research & Progress of SSE

基　　金：国家自然科学基金青年科学基金资助项目(62104218)。

摘　　要：为研究应用于宇航领域增强型GaN HEMT器件的抗辐照性能,制备了导通电流为20 A、击穿电压为345 V的增强型p-GaN栅HEMT器件,并分别研究了器件抗总剂量效应能力与抗单粒子效应能力。实验结果表明,研制的增强型p-GaN栅HEMT器件在辐照剂量率为1.55 rad(Si)/s、累积总剂量为300 krad(Si)的条件下,器件的阈值电压保持不变,同时器件在传能线密度为37.3 MeV/(mg·cm^(2))的离子辐照下,仍然实现了大于300 V的击穿电压。表明研制的增强型p-GaN栅HEMT器件具有良好的抗辐照能力。As enhancement-mode(E-mode)GaN HEMT devices gain prominence in aerospace applications,investigating their radiation resistance becomes increasingly critical.This study focuses on an E-mode p-GaN gate HEMT device,featuring a 20 A conduction current and a 345 V break⁃down voltage.Experimental assessments were performed to examine the device's response to both to⁃tal dose effects and single-particle events.The results indicate that,under irradiation conditions with a dose rate of 1.55 rad(Si)/s and an accumulated dose of 300 krad(Si),the threshold voltage remains unchanged.Furthermore,under irradiation with ion linear energy transfer of 37.3 MeV/(mg·cm^(2)),the device maintains a breakdown voltage exceeding 300 V.These findings affirm the exceptional radi⁃ation resistance of the enhanced p-GaN gate HEMT device discussed in this paper.

关 键 词：p⁃GaN栅HEMT器件 总剂量效应 单粒子效应 

分 类 号：TN386[电子电信—物理电子学]