微型阵列束闸设计与实验  

Design and experiment of micro-arrayed beam blanker

作　　者：张利新 孙博彤 刘星云 殷伯华[1,2] 刘俊标 韩立[1,2] ZHANG Lixin;SUN Botong;LIU Xingyun;YIN Bohua;LIU Junbiao;HAN Li(Research Department of Micro-nano Fabrication Technology and Intelligent Electronic Devices,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院电工研究所微纳加工技术与智能电气设备研究部,北京100190 [2]中国科学院大学电子电气与通信工程学院,北京100049

出　　处：《光学精密工程》2024年第13期2061-2069,共9页Optics and Precision Engineering

基　　金：国家自然科学青年基金资助项目(No.62101528);中国科学院科研仪器设备研制项目(No.GJJ⁃STD20200003)。

摘　　要：微型阵列束闸是多束电子束曝光系统的关键部件,用于控制多束电子束的开/关,实现复杂图形的快速曝光。对3×3微型阵列束闸进行了设计与制作,并进行了多束电子束偏转实验研究。对阵列束闸结构进行了优化设计,并基于MEMS加工工艺成功制备了阵列束闸。针对阵列束闸的控制要求,设计了可单独控制的阵列束闸控制器。将控制器与阵列束闸进行连接,验证了控制器的偏转速度与功能完整性。最后,在多束电子束测试平台对阵列束闸进行了偏转实验,研究串扰对电子束偏转的影响。实验结果表明:阵列束闸控制器的偏转速度达到43.5 MHz,大于设计值10 MHz;阵列束闸成功实现了单独控制电子束开和关,束闸的偏转距离在25~30μm之间,小于计算值43.29μm;串扰程度均小于3%。该阵列束闸已经具备多束电子束开/关控制功能,但在偏转精度,设计和加工工艺等方面还需进一步优化和完善。The micro-arrayed beam blanker is essential for the multi-beam electron beam lithography sys⁃tem,enabling the rapid exposure of complex graphics by controlling the electron beam′s opening and clos⁃ing.In this study,a 3×3 micro-arrayed beam blanker was designed and fabricated,followed by an experi⁃ment on multi-beam electron beam deflection.Based on prior optimization,the structural design and MEMS-based processing technology were developed,resulting in successful fabrication of the beam blank⁃er.A controller capable of independently managing the multi-beam was then created and connected to the beam blanker to validate its deflection speed and functionality.The deflection experiment conducted on a multi-beam test platform examined crosstalk effects.Results indicate that the controller′s deflection speed reaches 43.5 MHz,exceeding the design target of 10 MHz.The beam blanker independently opens and closes the electron beam,with a deflection range of 25-30μm,which is below the predicted 43.29μm.Crosstalk levels were all under 3%.While the designed micro-arrayed beam blanker effectively controls the multi-beam electron beam,further optimization is needed for deflection accuracy and processing tech⁃nology.

关 键 词：电子束曝光 阵列束闸 多束电子束 串扰 偏转速度 

分 类 号：TN16[电子电信—物理电子学]