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作 者:张宇强 余新刚 叶宗标 Yuqiang ZHANG;Xingang YU;Zongbiao YE(School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China;Key Laboratory of Radiation Physics and Technology,Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,People’s Republic of China)
机构地区:[1]School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,People’s Republic of China [2]Key Laboratory of Radiation Physics and Technology,Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,People’s Republic of China
出 处:《Plasma Science and Technology》2024年第8期95-103,共9页等离子体科学和技术(英文版)
基 金:supported by National Natural Science Foundation of China(Nos.12172356,U23B20110);the Interdisciplinary and Collaborative Teams of CAS。
摘 要:Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particles and background gas molecules.The dynamic evolution of the plasma sheath,as well as the flux and energy distribution of ions impacting on the mirror surface,was discussed.It was found that the emission of secondary electrons under the EUV irradiation on the ruthenium mirror coating creates a positively charged wall and then prevents the ions from impacting on the mirror and therefore changes the flux and energy distribution of ions reaching the mirror.Furthermore,gas pressure has a notable effect on the plasma sheath and the characteristics of the ions impinging on the mirrors.With greater gas pressure,the sheath potential decreases more rapidly.The flux of ions received by the mirror grows approximately linearly and at the same time the energy corresponding to the peak flux decreases slightly.However,the EUV source intensity barely changes the sheath potential,and its influence on the ion impact is mainly limited to the approximate linear increase in ion flux.
关 键 词:LITHOGRAPHY PARTICLE-IN-CELL EUV EUV-induced plasma PIC-MCC
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