一种高频单片GaN DC-DC降压转换器设计  

Design of a High-frequency Monolithic GaN DC-DC Buck Converter

作　　者：何凡 沈红伟 来龙坤 罗卫军[3] HE Fan;SHEN Hongwei;LAI Longkun;LUO Weijun(Xinhaizeyou Co.,Ltd.,Beijng 100094;Beijing Smartchip Microelectronics Technology Co.,Ltd.,Beijing 102211;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029)

机构地区：[1]中关村芯海择优科技有限公司,北京100094 [2]北京智芯微电子科技有限公司,北京102211 [3]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2024年第3期417-423,共7页Microelectronics

基　　金：北京市科技计划项目资助项目(Z231100003823007)。

摘　　要：基于全耗尽型(D-mode)0.25μm硅基氮化镓(GaN-on-Si)工艺,设计了一款高频单片GaN DC-DC降压转换器芯片。该芯片集成了驱动电路和半桥功率级电路,驱动电路中电平放大功能通过有源上拉结构实现,在100~200 MHz频率范围内,单片GaN DC-DC降压转换器可直接被0.7 V的高速脉冲信号控制,无需片外模块,其峰值功率级效率达到92.2%,峰值总效率达到84.24%,峰值功率为7.7 W。相较于前期工作,芯片工作范围从100 MHz提升至200 MHz,在保证芯片效率性能的情况下,实现了对工作频率的大幅提升。This study presents the design and implementation of a high-frequency monolithic GaN DC-DC buck converter,fabricated using a 0.25 μm D-mode GaN-on-Si process.The chip integrates both the driver and the half-bridge power stage.The level-amplifying function in the driver is achieved through an active pull-up structure.Within the frequency range of 100-200 MHz,the proposed monolithic GaN DC-DC buck converter can be directly controlled by high-speed pulse signals with a voltage swing as low as 0.7 V,without requiring external off-chip modules.It achieves a peak power-stage efficiency,overall efficiency,and output power of 92.2%,84.24% and 7.7 W respectively.Compared with previous research,this chip extends the operating frequency from 100 to 200 MHz while maintaining efficient performance,representing a significant enhancement in operating frequency.

关 键 词：GaN DC-DC降压转换器 单片电路 驱动电路 有源上拉结构 

分 类 号：TN86[电子电信—信息与通信工程] TM44[电气工程—电器]