基于GaN HEMT的80GHz~140GHz超宽带功率放大器  

An 80GHz~140GHz ultra-broadband power amplifier based on GaN HEMT

作　　者：刘仁福 王维波[1] 陶洪琪[1] 郭方金 骆晨杰 商德春 张亦斌 吴少兵[1] LIU Renfu;WANG Weibo;TAO Hongqi;GUO Fangjin;LUO Chenjie;SHANG Dechun;ZHANG Yibin;WU Shaobing(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《空间电子技术》2024年第4期99-104,共6页Space Electronic Technology

摘　　要：为满足毫米波通信等应用领域对超宽带功率放大器的需求,文章采用南京电子器件研究所50 nm GaN HEMT工艺研制了一款覆盖W、F波段的超宽带功率放大器。首先,使用模型对实验数据进行拟合外推,得到宽带范围内管芯的功率阻抗;其次,采用LC结构加高低阻抗微带线方式进行宽带电路匹配,并设计了末级、级间和输入级的匹配电路拓扑结构;最后,对级间匹配电路进行综合优化调整,并采用兰格桥进行功率合成。最终,放大器在80GHz~140GHz范围内,典型线性增益达18dB,饱和输出功率达100mW,同时,在全频段范围内,芯片具有±1dB的功率平坦度和良好的回波损耗,在太赫兹领域具有广阔的应用前景。In this article,an ultra-broadband power amplifier covering W and F bands was developed using the 50nm GaN HEMT technology of Nanjing Electronic Devices Institute in order to meet the demand for broadband power amplifiers in millimeter wave communications and other applications.First,the experimental data was fitted and extrapolated using the model to get the broadband power impedance of the HEMT.Secondly,the LC structure and high-low impedance microstrip lines were used for broadband matching to design the matching circuits of the output stage,inter-stages and input stage.Finally,the inter-stage matching circuits are comprehensively optimized and the Lange coupler is used for power combining.The measured typical gain and saturated output power of fabricated power amplifier is about 18dB and 100mW,respectively,across over 80GHz~140GHz range.A power flatness of±1dB and high return loss were obtained which indicate broad application prospects in the terahertz fields.

关 键 词：氮化镓 超宽带 功率放大器 

分 类 号：V443[航空宇航科学与技术—飞行器设计] TN253[电子电信—物理电子学]