NH_(3)/N_(2)复合热退火技术改善高浓度Mg掺杂GaN材料性能  

Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH_(3)/N_(2)

作　　者：蒋宗霖 闫丹 张宁[1] 魏同波[1,2] 王军喜 魏学成[1,2] JIANG Zonglin;YAN Dan;ZHANG Ning;WEI Tongbo;WANG Junxi;WEI Xuecheng(Research and Development Center for Wide Bandgap Semiconductors,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所宽禁带半导体研发中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《发光学报》2024年第8期1325-1333,共9页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2022YFF0705600);国家自然科学基金(62135013)。

摘　　要：研究了NH_(3)/N_(2)复合热退火技术对高浓度Mg掺杂GaN材料晶体质量、发光性质及导电性能的影响。实验结果表明,相较于传统N_(2)氛围高温热退火后处理工艺而言,NH_(3)氛围高温热退火后处理工艺可以改善高浓度Mg掺杂GaN材料的晶体质量,同时可以增进Mg受主原子的有效掺杂,使得其光致发光谱中蓝光峰强度增强。采用NH_(3)氛围高温热退火结合N_(2)氛围低温热退火后处理工艺复合技术制备得到的高浓度Mg掺杂GaN材料内部背景电子浓度显著降低。这是由于在NH_(3)氛围高温热退火后处理工艺中,NH_(3)的热分解产物能够有效降低材料内N空位和间隙Ga原子等浅施主型缺陷浓度,最终改善高浓度Mg掺杂GaN材料的导电性能。The effect of a novel post-growth process,i.e.high-temperature thermal annealing process in NH_(3),on the crystal quality,luminescence property,and electrical conductivity of the heavily Mg-doped GaN was studied.The experimental results showed that,compared with the traditional high-temperature annealing process in N_(2),the high-temperature thermal annealing process in NH_(3) can improve crystal quality in the heavily Mg-doped GaN,while promote the further effective doping of Mg acceptors,resulting in an enhancement of the intensity of the blue luminescence band in its photoluminescence spectra.The heavily Mg-doped GaN with significantly lower background electron concentration was obtained by combining high-temperature thermal annealing process in NH_(3) with low-temperature thermal annealing process in N_(2).This is because that the thermal decomposition products of NH_(3) in the post-growth process can effectively reduce the concentration of shallow donor-type defects such as N vacancies and interstitial Ga atoms in the material,ultimately improving electrical conductivity of the heavily Mg-doped GaN.

关 键 词：氮化镓 Mg掺杂 热退火工艺 氨气 

分 类 号：O482.31[理学—固体物理]