提高EEPROM擦写次数耐久力的工艺分析  

Analysis of the Process for Improving the Durability of EEPROM Erasure and Write Times

作　　者：宋金星 SONG Jinxing(Shanghai Belling Co.,Ltd.,Shanghai 200233,China)

机构地区：[1]上海贝岭股份有限公司,上海200233

出　　处：《集成电路应用》2024年第7期6-7,共2页Application of IC

摘　　要：阐述基于器件工艺特性,提高EEPROM擦写次数耐久力的一种方法,采用控制掺杂氯的比例提高浮栅氧化层(隧穿氧化层)的质量,尤其是两侧的质量,并利用快速热退火技术修复氧化层缺陷,进一步提高氧化层质量。This paper describes a method based on device process characteristics to improve the endurance of EEPROM erase times.It uses controlling the proportion of doped chlorine to improve the quality of the floating gate oxide layer(tunneling oxide layer),especially on both sides,and uses rapid thermal annealing technology to repair oxide layer defects,further improving the quality of the oxide layer.

关 键 词：集成电路设计 EEPROM 擦写耐久力 

分 类 号：TN402[电子电信—微电子学与固体电子学]