MIM电容上下级板一步刻蚀的结构分析  

Analysis of the Structure of One Step Etching in MIM Capacitor Upper and Lower Plates

作　　者：沈宇栎 SHEN Yuli(Jiangsu Zhuosheng Microelectronics Co.,Ltd.,Jiangsu 214072,China)

机构地区：[1]江苏卓胜微电子股份有限公司,江苏214072

出　　处：《集成电路应用》2024年第7期71-73,共3页Application of IC

摘　　要：阐述在一张光罩下,通过一次干法刻蚀,一步刻蚀出相对面积较小上极板和面积较大下级板的电容物理结构。对比传统的通过两道光罩和两次干法刻蚀形成不同面积的上、下级板结构,新的一步刻蚀方法简化了工艺流程。通过多个试验批次验证,新的一步刻蚀物理结构,其上下级板距离能够达到与传统结构一样的效果,防止刻蚀过程中金属反溅影响击穿电压电性能的问题。This paper describes the physical structure of a capacitor with a relatively small upper plate and a larger lower plate area etched in one step through a dry etching process under a photomask.Compared to the traditional method of forming upper and lower layer structures with different areas through two photomasks and two dry etching processes,the new one-step etching method simplifies the process flow.Through multiple experimental batches,it has been verified that the new one-step etching physical structure can achieve the same effect as the traditional structure in terms of the distance between the upper and lower plates,preventing the problem of metal splashing affecting the breakdown voltage and electrical performance during the etching process.

关 键 词：MIM电容 干法刻蚀 IPD 物理结构 

分 类 号：TN305.7[电子电信—物理电子学]