孔金属化设计对高温共烧陶瓷基板热阻的影响  

Effect of Hole Metallization Design on Thermal Resistance of High Temperature Co-Fired Ceramic Substrate

作　　者：刘林杰 李杰[2] 郝跃 Liu Linjie;Li Jie;Hao Yue(School of Microelectronics,Xi'an Unversity of Electronic Science and Technology,Xi'an 710126,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]西安电子科技大学微电子学院,西安710126 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第9期867-872,共6页Semiconductor Technology

摘　　要：高温共烧陶瓷(HTCC)基板广泛应用于电子封装领域,其热阻是一个重要指标。围绕Al_(2)O_(3)和AlN陶瓷基板,探究在不同金属化孔间距和布局下的热阻规律。建立了陶瓷基板热传递有限元模型,并对其热阻进行仿真。制备了两种陶瓷基板,测试了其在不同功率负载下的热阻。测试结果表明,相同规格的AlN陶瓷基板的热阻约为Al_(2)O_(3)的25%;Mo孔金属化对Al_(2)O_(3)陶瓷基板的散热能力有明显提升作用,孔密度越大,基板热阻越低;而不同W金属化孔密度下的AlN基板热阻没有显著差异。仿真结果与实测结果基本吻合,为陶瓷基板的热设计提供了参考。High temperature co-fired ceramic(HTCC)substrate is widely used in the field of electronic packaging,and its thermal resistance is an important index.Focusing on Al_(2)O_(3) and AlN ceramic substrates,the thermal resistance law under different spacing and layout of metallization holes was explored.The finite element model of heat transfer of ceramic substrate was established in order to simulate the thermal resistance.Two kinds of ceramic substrates were prepared and their thermal resistances under different power loads were tested.The test results show that the thermal resistance of AlN ceramic substrates with the same specifications is about 25% of that of Al_(2)O_(3).The Mo hole metallization has a significant improvement effect on the heat dissipation ability of Al_(2)O_(3) ceramic substrate,and the higher the hole density,the lower the thermal resistance of the substrate.However,there is no significant difference in the thermal resistance of AlN substrate under different W metallization hole densities.The simulation results are basically consistent with the test results,which provides reference for the thermal design of ceramic substrates.

关 键 词：陶瓷基板 高温共烧陶瓷(HTCC) 热阻 热设计 孔金属化 

分 类 号：TN305.94[电子电信—物理电子学]