IC互连金属及其阻挡层化学机械抛光的研究进展  

Research Progress in Chemical-Mechanical Polishing of IC Interconnect Metals and Their Barrier Layers

作　　者：李雯浩宇 高宝红 霍金向 贺斌 梁斌 刘鸣瑜 LI Wenhaoyu;GAO Baohong;HUO Jinxiang;HE Bin;LIANG Bin;LIU Mingyu(School of Electronic Information Engineering,Hebei University of Technology,Tianjin 300130,China;Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing,Tianjin 300130,China;Hebei Engineering Research Center of Microelectronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北省微电子超精密加工材料与技术协同创新中心,天津300130 [3]河北省微电子专用材料与器件工程研究中心,天津300130

出　　处：《材料导报》2024年第16期228-235,共8页Materials Reports

基　　金：河北省自然科学基金(F2022202072);青年科学基金项目(61704046)。

摘　　要：集成电路的产业发展作为衡量一个国家经济实力的重要指标,反映该国的整体实力。在集成电路的众多制备工艺中,化学机械抛光(Chemical mechanical planarization,CMP)是关键制造技术之一,也是目前应用最广且能够实现全局和局部平坦化的技术。互连技术与CMP紧密相关,芯片互连属于后段制程,目前的互连技术主要包括铜互连、钴互连,在使用这些互连技术时不可避免地会影响芯片的性能,包括金属离子扩散速率快、薄膜与衬底的结合强度差等,学者们通过加入阻挡层来解决这些问题。互连金属和阻挡层都要进行CMP工序,它直接决定芯片良率和可靠性。本文总结了互连金属及其阻挡层化学机械抛光的研究进展,以技术节点出发介绍了三种典型的互连金属以及它们常用的阻挡层材料,分析总结了各种材料的抛光机理、抛光液组分、抛光效果及其材料的应用优势与缺陷,简述了在CMP互连与阻挡层的研究中存在的局限性,最后对新的材料、新型互连技术的研发及应用进行了展望。The progress of integrated circuit can be used as an important indicator to measure the economic strength of a country,so as to reflect the overall strength of the country.Among the many processes of integrated circuit,CMP is one of the key manufacturing technologies,and it is also the only technology that can achieve global and local flattening which is widely used.Chip interconnection is a post-stage process,and the current technologies mainly include copper interconnection and cobalt interconnection.When using these interconnection technologies,the performance of the chip will inevitably be affected,including the metal diffusion problem,the bond strength between the film and the substrate,and so on.We choose to add different barrier layers to solve these problems.Both interconnect metal and barrier layer must undergo CMP process,which directly determines chip yield and reliability.The limitations in the research of CMP interconnection and barrier layer are introduced briefly.In this paper,the materials of various technical joint barrier layers and the substitution of interconnect metals are reviewed.

关 键 词：铜互连 钴互连 钌互连 钽/氮化钽阻挡层 钴阻挡层 钌阻挡层 化学机械抛光 

分 类 号：TN305.2[电子电信—物理电子学] TN304.9