1500 V超结功率MOS器件优化与电容特性研究  

Optimization and Capacitance Characteristics of 1500 V Super Junction Power MOS Devices

作　　者：种一宁 李珏 乔明[1,2,3] CHONG Yi-ning;LI Jue;QIAO Ming(National Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,Sichuan 611731,China;Guangdong Institute of Electronic Information Engineering,University of Electronic Science and Technology of China,Dongguan,Guangdong 523950,China;Shenzhen Institute for Advanced Study,University of Electronic Science and Technology of China,Shenzhen,Guangdong 518110,China)

机构地区：[1]电子科技大学电子薄膜与集成器件全国重点实验室,四川成都611731 [2]电子科技大学广东电子信息工程研究院,广东东莞523950 [3]电子科技大学(深圳)高等研究院,广东深圳518110

出　　处：《电子学报》2024年第7期2271-2278,共8页Acta Electronica Sinica

基　　金：广东省基础与应用基础研究基金(No.2021B1515020031);国家自然科学基金(No.62174024);航空科学基金(No.201943080002)~~。

摘　　要：本文利用半超结结构进行高压超结功率金属氧化物半导体(Metal Oxide Semiconductor,MOS)器件的设计,基于Sentaurus TCAD(Technology Computer Aided Design)仿真平台设计超结元胞结构并优化高压超结功率MOS器件的击穿电压与导通电阻,随后探究了寄生电容的特性.最后,基于多次外延工艺自主设计出一款器件结构仿真击穿电压1658 V、工艺仿真击穿电压1598 V、比导通电阻值303 mΩ·cm^(2)的高压超结功率MOS器件,与相同耐压值器件相比,比导通电阻值下降约50%.同时探究了超结掺杂浓度与厚度以及电压支持层掺杂浓度与厚度4个主要结构参数对器件寄生电容特性的影响.In this paper,the design of high-voltage super junction power MOS(Metal Oxide Semiconductor)de⁃vice is carried out by using the semi-super junction structure,the super junction cell structure is designed based on the Sentaurus TCAD(Technology Computer Aided Design)simulation platform,and the breakdown voltage and on-resis⁃tance of the high-voltage super junction power MOS devices are optimized,and then the characteristics of parasitic ca⁃pacitance are explored.Finally,based on multiple epitaxial processes,a high-voltage super junction power MOS device with a simulated breakdown voltage of 1658 V,a process simulation breakdown voltage of 1598 V and a specific onresistance value of 303 mΩ·cm2 has been independently designed,which reduced the specific on-resistance value by about 50%compared with the same withstand voltage device.At the same time,the influence of four main structural pa⁃rameters,namely super junction doping concentration and thickness and voltage support layer doping concentration and thickness,on the parasitic capacitance characteristics of the device has been explored.

关 键 词：超结VDMOS 元胞 击穿电压 比导通电阻 寄生电容 

分 类 号：TN323.4[电子电信—物理电子学]