铝薄膜的制备及其性能研究  

作　　者：杨正华 符姣姣 姚世鹏 

机构地区：[1]中国重型机械研究院股份公司,西安710018

出　　处：《科技创新与应用》2024年第27期90-92,96,共4页Technology Innovation and Application

摘　　要：采用直流磁控溅射法沉积铝薄膜,利用扫描电子显微镜(SEM)、四探针电阻测试仪和红外发射率测试仪对其形貌和性能进行表征,研究溅射功率(70、90、110、130 W)对铝薄膜的沉积速率、表面形貌、电学性能和红外发射率的影响规律。结果表明,随溅射功率的增大,铝薄膜的沉积速率逐渐增大,表面晶粒尺寸逐渐增大;铝薄膜的电阻率先降低后升高,其红外发射率呈现相同趋势。当溅射功率为110 W时,铝薄膜的红外发射率最低(<0.12)。Al films were depositedusing direct current magnetron sputtering.The structure and properties of the films were characterized byscanning electron microscopy(SEM),four probe resistance tester and infrared emissivity tester.Effects of sputtering power(70,90,110 and 130 W)on deposition rate,surface morphology,electrical properties and infrared emissivity of Al films were studied.The results showed that,with the sputtering power increasing,the deposition rate and surface grain size of Al films went up gradually.The resistivity of Alfilm decreased firstly and then increased,and the infrared emissivity showed the same trend.When the sputtering power is 110 W,the infrared emissivity of aluminum film is the lowest(<0.12).

关 键 词：磁控溅射 铝薄膜 溅射功率 红外发射率 电学性能 

分 类 号：TG174.44[金属学及工艺—金属表面处理]