分子束外延中波/中波双色HgCdTe材料研究  

Study on Medium-Wave/Medium-Wave Two-Color HgCdTe Materials by Molecular Beam Epitaxy

作　　者：李震[1] 王丹 邢伟荣[1] 王丛[1] 周睿 折伟林[1] LI Zhen;WANG Dan;XING Wei-rong;WANG Cong;ZHOU Rui;SHE Wei-lin(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2024年第9期1-6,共6页Infrared

基　　金：国家自然科学基金项目(61971395,52075519)。

摘　　要：采用分子束外延(Molecular Beam Epitaxy,MBE)法制备了高质量的npn型中波/中波双色HgCdTe材料。利用傅里叶变换红外光谱仪(Fourier Transform Infrared Spectrometer,FTIR)、二次离子质谱(Secondary Ion Mass Spectroscopy,SIMS)、X射线双晶衍射仪(X-Ray double-crystal Diffractometer,XRD)分别测试了材料组分、厚度、元素分布和平均半峰宽等参数。结果表明,材料底部n型吸收层的碲镉汞组分为0.318,厚度为7.15 m;p型层的组分为0.392,厚度为2.47 m;顶部n型吸收层的组分为0.292,厚度为4.71 m。As掺杂浓度约为3×10^(18)cm^(-3),In掺杂浓度为4×10^(15)cm^(-3),平均半峰宽约为95 arcsec,表明该材料具有良好的质量。利用聚焦离子束(Focused Ion Beam,FIB)、扫描电子显微镜(Scanning Electron Microscope,SEM)、X射线能谱仪(Energy-Dispersive X-ray spectrometer,EDX)测试表征了HgCdTe外延材料表面缺陷的形貌,确认缺陷主要受生长温度和Hg/Te束流比等生长参数的影响。High-quality npn medium-wave/medium-wave two-color HgCdTe materials were prepared by molecular beam epitaxy.Fourier transform infrared spectroscopy(FTIR),secondary ion mass spectroscopy(SIMS)and X-ray double-crystal diffractometer(XRD)were used to test the material composition,thickness,element distribution,average half-peak width and other parameters.The results show that the HgCdTe composition of the bottom n-type absorption layer is 0.318 with a thickness of 7.15 m,the composition of the p-type layer is 0.392 with a thickness of 2.47 m,and the composition of the top n-type absorption layer is 0.292 with a thickness of 4.71 m.The As doping concentration is about 3×10^(18)cm^(-3),the In doping concentration is 4×10^(15)cm^(-3),and the average half-peak width is about 95 arcsec,indicating that it has good quality.The surface defects of the HgCdTe epitaxial layer were characterized by focused ion beam(FIB),scanning electron microscope(SEM)and energy-dispersive X-ray spectrometer(EDX)tests.It is confirmed that the defects are mainly related to growth parameters such as growth temperature and Hg/Te beam-current ratio.

关 键 词：HGCDTE 表面缺陷 原位掺杂 

分 类 号：TN215[电子电信—物理电子学] TB30[一般工业技术—材料科学与工程]