高k栅介质的TDDB效应  

TDDB effect of high k gate dielectric

作　　者：任康 贡佳伟 丁俊贤 王磊[1] 李广[1] REN Kang;GONG Jiawei;DING Junxian;WANG Lei;LI Guang(School of Materials Scienceand Engineering,Anhui University,Hefei 230601,China)

机构地区：[1]安徽大学材料科学与工程学院,安徽合肥230601

出　　处：《安徽大学学报（自然科学版）》2024年第5期52-56,共5页Journal of Anhui University(Natural Science Edition)

基　　金：安徽省自然科学基金资助项目(1708085ME123,2208085J16);安徽大学大学生创新创业训练计划项目(X202110357011)。

摘　　要：半导体工艺进入45 nm以后,使用高k栅介质HfO_(2)代替传统的SiO_(2),解决了因栅氧化层变薄而引起的栅极漏电流过大的问题.经时击穿(time dependent dielectric breakdown,简称TDDB)效应的寿命时间是衡量栅氧化层质量的重要因素,然而高k栅介质存在更多的氧相关缺陷,对电压的反应更敏感,因此研究高k栅介质TDDB效应具有重要意义.研究影响高k栅介质TDDB效应的因素、减轻高k栅介质TDDB效应的途径.研究结果表明:栅氧化层面积越大,越容易被击穿,TDDB效应越严重;温度越高,击穿时间越短,TDDB效应越严重;氧环境下对高k栅介质进行沉积后退火,可减轻高k栅介质的TDDB效应.After the semiconductor process enters 45 nm,the high k gate dielectric HfO_(2)is used to replace the traditional SiO_(2),which solves the problem of large gate leakage flow caused by the thinning of gate oxide layer.The lifetime of time dependent dielectric breakdown(TDDB)effect is an important factor to measure the quality of gate oxide layer.However,there are more oxygen related defects in high k gate dielectric,which is more sensitive to voltage response.Therefore,it was of great significance to study TDDB effect in high k gate dielectric.The factors influencing TDDB effect in high k gate dielectric and the approach of reducing TDDB effect in high k gate dielectric were studied.The results showed that the breakdown occurred more easily and the TDDB effect was more serious,as the area of gate oxide was larger.The breakdown time was shorter and the TDDB effect was more serious,as the temperature was higher.The TDDB effect of high k gate dielectric could be reduced by annealing after deposition in oxygen environment.

关 键 词：高k 栅介质 经时击穿效应 栅氧化层 HfO_(2) 

分 类 号：TB383[一般工业技术—材料科学与工程]