基于VHDL-AMS的模数转换器辐射效应建模与仿真方法  

Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS

作　　者：梁博 刘锦辉[1] 张晓鹏 谭雯丹 张馨丹 刘刚[1] LIANG Bo;LIU Jin-hui;ZHANG Xiao-peng;TAN Wen-dan;ZHANG Xin-dan;LIU Gang(School of Computer Science and Technology,Xidian University,Xi’an,Shaanxi 710071,China)

机构地区：[1]西安电子科技大学计算机科学与技术学院,陕西西安710071

出　　处：《电子学报》2024年第8期2706-2717,共12页Acta Electronica Sinica

基　　金：强脉冲辐射环境模拟与效应国家重点实验室专项基金(No.SKLIPR2011)。

摘　　要：模数转换器(Analog-to-Digital Converter,ADC)是连接模拟信号域与数字信号域的关键器件,而现有研究缺乏ADC辐照效应建模的相关内容.为满足大型模数混合信号系统辐照效应建模仿真的需要,本文提出了建立具有辐照效应的ADC行为级模型的方法.首先根据ADC的工作原理将其拆解为不同的通用模块,使用模拟和混合信号硬件描述语言(Very High speed integrated circuit hardware Description Language for Analog and Mixed Signals,VHDL-AMS)建立了各模块的行为级模型.接着根据基本原理将各模块动态组合为未辐照情况下基本的ADC模型.对于ADC的辐照效应,通过开展辐照试验,测量了ADC芯片HWD7710和SAD9434受总剂量(Total Ionizing Dose,TID)效应和中子辐射(Neutron Radiation,NR)效应影响的工作参数,并利用最小二乘法拟合获得ADC的工作参数与辐照剂量的关系式.最后根据辐照关系式,在基本模型上添加辐照参数模块,并建立两种不同结构ADC的TID与NR模型.通过仿真结果与试验数据对比,验证了所建ADC辐射效应模型的普适性和精度.模型的静态参数仿真结果与试验结果的相对偏差在5%以内,证明该方法支持对不同ADC及不同辐射效应进行辐照效应模型建模.The analog-to-digital converter(ADC),a key component bridging the analog and digital signal domains,is critical to the interface between these domains.However,existing research falls short in providing comprehensive models that take into account radiation effects on ADCs.To address the demands of simulating radiation effects in large-scale mixed-signal systems,this paper presents a method for developing behavioral-level models of ADCs that embody radiation effects.The paper begins by dividing the ADC into its constituent generic modules based on its working principles,and es⁃tablishing behavioral models for each module using the very high speed integrated circuit hardware description language for analog and mixed signals(VHDL-AMS).These modules are then dynamically assembled according to fundamental princi⁃ples to form the baseline ADC model under non-irradiated conditions.To address the radiation effects on ADCs,irradiation experiments were conducted to quantify the performance parameters of two ADC chips,HWD7710 and SAD9434,under to⁃tal ionizing dose(TID)and neutron radiation(NR)exposure.The operating parameters affected by these radiation effects were meticulously measured.Least squares regression was then used to derive equations correlating the functional parame⁃ters of the ADC with radiation dose.Finally,TID and NR models for two different structured ADCs were developed by in⁃corporating radiation parameter modules into the basic model based on the radiation relation equations.The universality and accuracy of the constructed ADC radiation effect model was verified by comparing the simulated results with experimental data.The relative deviation between the static parameter simulation results and the experimental results was within 5%.The results show that this method supports the modeling of radiation effects for various ADCs and multiple radiation effects.

关 键 词：模数转换器 建模方法 总剂量效应 中子辐射效应 静态参数 动态参数 

分 类 号：TN402[电子电信—微电子学与固体电子学] TP39[自动化与计算机技术—计算机应用技术]