AlGaN/GaN/AlGaN双异质结构双极特性的研究  

Bipolar Properties of AlGaN/GaN/AlGaN Double Heterostructures

作　　者：韩铁成 彭晓灿 Han Tiecheng;Peng Xiaocan(School of Electronic and Control Engineering,North China Institute of Aerospace Engineering,Langfang 065000,China;School of Remote Sensing and Information Engineering,North China Institute of Aerospace Engineering,Langfang 065000,China)

机构地区：[1]北华航天工业学院电子与控制工程学院,河北廊坊065000 [2]北华航天工业学院遥感信息工程学院,河北廊坊065000

出　　处：《北华航天工业学院学报》2024年第4期5-8,共4页Journal of North China Institute of Aerospace Engineering

基　　金：北华航天工业学院博士基金项目(BKY-2021-16)。

摘　　要：通过一维薛定谔-泊松方程自洽仿真,研究了AlGaN缓冲层组分(0~0.08)和GaN沟道层(20,50和80nm)对AlGaN/GaN/AlGaN双异质结构能带和载流子分布的影响。缓冲层Al组分的增加可有效抬高沟道层背部的势垒,从而提高2DEG的限域性。随着GaN沟道层厚度增加,GaN沟道层/AlGaN缓冲层界面(底部界面)的势垒高度会增加。当沟道层厚度达到50nm后,在缓冲层Al组分为0.08的情况下,该异质结构会在底部界面附近诱导出2DHG,出现“双极特性”。一旦2DHG形成,缓冲层Al组分的持续增加将导致更高密度的2DHG,而对能带、2DEG限域性和2DEG密度的影响变得不明显。The effects of Al-content in AlGaN buffer(0-0.08) and GaN channel(20,50 and 80 nm) on the energy-band and carrier distribution of AlGaN/GaN/AlGaN double heterostructures are investigated by one-dimensional Schrodinger-Poisson self-consistent simulations. As the Al-content of the buffer increases,the potential barrier at the back of the channel is effectively raised,thus improving the 2DEG confinement. As the thickness of the GaN channel increases,the barrier height at the GaN channel/AlGaN buffer interface(bottom interface) increases. When the channel thickness reaches 50 nm,the heterostructure induces 2DHG near the bottom interface at an Al-content of 0.08 for the buffer,appearing "bipolar characteristic". Once the 2DHG is formed,the continued increase in the Al-content of the buffer leads to a higher density of 2DHG,while the effects on the energy-band,2DEG confinement and 2DEG density become insignificant.

关 键 词：AlGaN/GaN/AlGaN 二维电子气 AlGaN缓冲层 二维空穴气 

分 类 号：O471.5[理学—半导体物理]