基于开通延迟时间的MOSFET结温的在线测量方法研究  

Research on On-line Measurement Method for MOSFET Junction Temperature Based on Turn-on Delay Time

作　　者：黄姣英[1] 李昌林 王琪 高成[1] HUANG Jiaoying;LI Changlin;Student Member;CPSS;WANG Qi;GAO Cheng(School of Reliability and Systems Engineering,Beihang University,Beijing 100191,China;The Fourth Electronic Research Institute of the Ministry of Industry and Information Technology,Beijing 100037,China)

机构地区：[1]北京航空航天大学可靠性与系统工程学院,北京100191 [2]工业和信息化部电子第四研究院,北京100037

出　　处：《电源学报》2024年第5期294-299,共6页Journal of Power Supply

摘　　要：随着工业需求的发展,对功率晶体管的可靠性提出了更高的要求。器件结温的实时测量因能够起到保证器件正常工作的作用而至关重要。通过对开通延迟时间在线测量方法的研究,设计测量电路测量不同结温下的开通延迟时间,建立二者关系;测量实际工况下的开通延迟时间,反推出器件结温,实现器件结温的在线测量。与红外测温枪测量结果进行对比,结果相近。所提基于开通延迟时间的MOSFET结温的在线测量方法,为今后结温的在线测量提供了新思路。With the development of industrial demand,higher requirements are put forward for the reliability of power transistors.The real-time measurement of device junction temperature can ensure the normal operation of the device,so it is very important.Through the research on the on-line measurement method for turn-on delay time,a measurement circuit is designed.By measuring the turn-on delay time at different junction temperatures,the relationship between them is established,the on-line measurement of device junction temperature is realized by measuring the turnon delay time under actual working conditions,and the device junction temperature is deduced.The results measured using the proposed method are similar to those obtained by an infrared temperature gun.In this way,an on-line measurement method for MOSFET junction temperature based on turn-on delay time is proposed,providing a new idea for the on-line measurement of junction temperature in the future.

关 键 词：结温 热敏电参数 开通延迟时间 

分 类 号：TM46[电气工程—电器]