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作 者:乔骁骏 薛刚 丑修建[2,3] QIAO Xiaojun;XUE Gang;CHOU Xiujian(School of Semiconductor and Physics,North University of China,Taiyuan 030051,China;Key Laboratory of Instrumentation Science and Dynamic Measurement of Education,North University of China,Taiyuan 030051,China;School of Instruments and Electronics,North University of China,Taiyuan 030051,China)
机构地区:[1]中北大学半导体与物理学院,太原030051 [2]中北大学电子测试技术国家级重点实验室,太原030051 [3]中北大学仪器与电子学院,太原030051
出 处:《功能材料》2024年第9期9222-9228,共7页Journal of Functional Materials
基 金:国家自然科学基金面上项目(62171415);山西省自然科学基金项目(202203021222068);广东省基础与应用基础研究基金(2023A1515110108)。
摘 要:使用化学机械抛光制备硅基铌酸锂单晶异质集成薄膜,研究了在薄膜制备过程中不同阶段下薄膜状态,利用原子力显微镜(AFM)和X射线光电子能谱分析(XPS)对单晶铌酸锂的表面形貌与元素含量变化进行了表征,并通过高压极化装置对铌酸锂薄膜实现了大面积周期性极化。研究结果表明,随着研磨步骤的进行,样品表面粗糙度逐渐降低,完成最终抛光工艺后,样品表面均方根粗糙度基本达到初始样品水平;抛光过程会导致Li缺失,但是可以通过后续工艺进行修复,研磨过程中引入的杂质元素会随着工艺的进行逐渐被去除,最终得到高质量硅基铌酸锂单晶薄膜;使用高压极化装置对铌酸锂薄膜进行极化,得到周期极化的条形电畴反转单元结构。该研究对制造基于铌酸锂的高性能传感器件具有重要意义。Silicon based lithium niobate(LiNbO_(3))single crystal heterogeneous integrated thin films were prepared using chemical mechanical polishing.The film states at different stages of the film preparation process were studied.The surface morphology and elemental content changes of single crystal LiNbO_(3)were characterized using atomic force microscopy(AFM)and X-ray photoelectron spectroscopy(XPS).Large area periodic polarization of LiNbO_(3)thin films was achieved using high-pressure polarization device.The results indicate that combined with the grinding progresses,the surface roughness of the sample gradually decreases.After completing the final polishing process,the root mean square roughness of the sample surface basically reaches the initial sample level,and the polishing process may lead to the loss of Li,but it can be repaired through subsequent processes.The impurity elements introduced during the grinding process will gradually be removed as the process progresses,ultimately obtaining high-quality silicon based LiNbO_(3)single crystal films,and using a high-pressure polarization device to polarize LiNbO_(3)thin film,a period strip domain reversal was obtained.This study is of great significance for the manufacturing of high-performance sensor components based on LiNbO_(3).
分 类 号:TN384[电子电信—物理电子学]
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