基于沉积温度的氧化铟锡微结构调控及性能  

ITO microstructures regulation and properties based on deposition temperature

作　　者：马可欣 曹丽莉 罗飞 周海涛 王瑶[1] 罗炳威 徐毅 刘松 孙坤 MA Kexin;CAO Lili;LUO Fei;ZHOU Haitao;WANG Yao;LUO Bingwei;XU Yi;LIU Song;SUN Kun(Institute of Materials Science and Engineering,Beihang University,Beijing 100083,China;AECC Beijing Institute of Aeronautical Materials,Beijing 100095,China;Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument,Beijing Information Science&Technology University,Beijing 100192,China;AECC Sichuan Gas Turbine Establishment,Mianyang 621000,Sichuan,China;AECC Shenyang Engine Research Institute,Shenyang 110015,China)

机构地区：[1]北京航空航天大学材料科学与工程学院,北京100083 [2]中国航发北京航空材料研究院,北京100095 [3]北京信息科技大学光电测试技术及仪器教育部重点实验室,北京100192 [4]中国航发四川燃气涡轮研究院,四川绵阳621000 [5]中国航发沈阳发动机研究所,沈阳110015

出　　处：《材料工程》2024年第9期11-18,共8页Journal of Materials Engineering

摘　　要：为提高薄膜热电偶在航空发动机高温零部件表面瞬时测温的性能,采用直流磁控溅射法制备氧化铟锡(ITO)薄膜。通过沉积温度变化调控薄膜的微结构,并采用X射线衍射仪、扫描电子显微镜、塞贝克测试仪、纳米划痕测试仪等分别表征薄膜的微观结构、表面形貌、热电性能及界面结合力。结果表明:沉积温度直接决定溅射原子的表面扩散、生长能力及ITO载流子迁移率,从而改善其结晶性和热电性能。沉积温度为450℃时,ITO薄膜表面呈三角形晶粒形貌,薄膜中In_(2)O_(3)沿(400)择优取向,相比低温沉积的薄膜展现出优异的结晶性,界面结合力达到10.89 mN,同时ITO功率因子显著提高,在900℃测试温度下功率因子约为400μW/(m·K^(2)),表现出较好的热电性能和高温结构稳定性。To improve the performance of thin film thermocouples for instantaneous temperature measurement on the surface of high temperature components of aeroengine,the indium tin oxide(ITO)thin films were prepared by DC magnetron sputtering.The microstructure of the thin film was regulated by the deposition temperature.The microstructure,surface morphology,thermoelectric properties and the bonding force of the films were characterized by X-ray diffractometer,scanning electron microscope,Seebeck tester and nanoscratch test,respectively.The results show that the deposition temperature directly determines the surface diffusion and growth capability of sputtering atoms,and carrier mobility of ITO,thereby improving their crystallinity and thermoelectric properties.The surface of the film presents a triangular grains morphology with a(400)preferred orientation at a deposition temperature of 450℃.Compared with the thin film sputtered at low temperature,it exhibits excellent crystallinity,with an interface bonding force of 10.89 mN.At the same time,the power factor of ITO significantly improves,with 400μW/(m·K^(2))at 900℃testing temperature,it shows good thermoelectric properties and high temperature stability.

关 键 词：ITO薄膜 薄膜热电偶 沉积温度 热电性能 

分 类 号：TN377[电子电信—物理电子学]