绝缘衬底上二维单晶材料制备研究进展  

Progress on the growth of two-dimensional single crystals on insulating substrates

作　　者：曾凡凯 白金霞 张晓闻 徐小志 Fankai Zeng;Jinxia Bai;Xiaowen Zhang;Xiaozhi Xu(Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,School of Physics,South China Normal University,Guangzhou 510006,China;Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,China)

机构地区：[1]华南师范大学物理学院,广东省高等学校物质结构与相互作用基础研究卓越中心,广东省量子调控工程与材料重点实验室,广州510006 [2]华南师范大学物理前沿科学研究院,粤港量子物质联合实验室,广州510006

出　　处：《科学通报》2024年第26期3887-3899,共13页Chinese Science Bulletin

基　　金：国家自然科学基金(12322406,52102043,61905215)资助。

摘　　要：二维材料因其原子级的厚度而展现出优异的电学、光学、磁学和热学性质,在电子、光电和能源等领域具有广阔的应用前景.随着传统硅基器件逼近物理极限,摩尔定律的延续面临着巨大挑战,二维材料被寄望于超越硅基材料以实现新一代电子器件的构建.可控制备大尺寸单晶二维薄膜是实现其高性能和大规模应用的关键.过去十几年来,研究人员在二维单晶的材料生长方面付出了大量努力,典型的二维导体石墨烯、半导体过渡金属硫族化合物和绝缘体六方氮化硼的生长尺寸已经由微米级扩展到晶圆级.然而,二维材料薄膜通常需要覆盖在绝缘衬底上才能充分发挥性能,因此在绝缘衬底直接生长二维单晶材料是实现高性能电子和光电子器件的终极目标.本文从绝缘衬底上不同种类二维单晶材料的生长行为展开探讨,回顾了近十年来过渡金属硫族化合物、石墨烯和氮化硼在绝缘衬底上的生长策略以及机理,对绝缘衬底上制备高质量二维单晶材料面临的挑战和未来发展进行了总结和展望.Two-dimensional(2D)materials,characterized by their atomic thickness and exceptional electrical,optical,magnetic,and thermal properties,hold great promise for applications in electronics,optoelectronics,and energy.As silicon-based transistors approach their theoretical physical limits,the continuation of Moore’s law faces significant challenges.It is expected that 2D materials will surpass silicon-based materials to enable the development of a new generation of electronic devices.The key to achieving their high performance and large-scale applications lies in the controllable preparation of large-sized single-crystal 2D films.Over the past decade,substantial progress has been made in growing single crystal 2D materials such as graphene(a typical 2D conductor),semiconductor transition metal chalcogenides(TMD),and insulators like hexagonal boron nitride(hBN).These materials have expanded from micron-level sizes to wafer scales.However,for optimal performance,it is generally necessary to layer 2D material films on insulating substrates.Therefore,the ultimate goal is direct growth of single-crystal 2D materials on insulating substrates.Due to the inherent properties of insulating substrates,such as their catalytic inertness towards precursor decomposition and the high energy barrier for reactive substances like carbon and boron nitride,growing 2D materials,especially graphene and hBN,on insulating substrates presents unique challenges.In contrast to metal substrates,the coupling interaction between 2D materials and insulating substrates is notably weak.As a result,obtained graphene and hBN films often exhibit significant defects and limited crystal quality,which negatively impact the physical integrity and electrical performance of devices based on these 2D materials.Consequently,achieving orientation control of 2D domains on insulating substrates proves exceptionally challenging.In this review,we first discussed the growth behavior of 2D materials on different substrates,including both catalytic and non-catalytic

关 键 词：二维材料 单晶 绝缘衬底 石墨烯 化学气相沉积 

分 类 号：TB34[一般工业技术—材料科学与工程]