退火对TSV电镀铜膜层性能影响研究  

Effect of annealing on the properties of electroplated copper in TSV

作　　者：于仙仙 蒋闯 张翠翠 Yu Xianxian;Jiang Chuang;Zhang Cuicui(Shanghai Key Laboratory of IC Process Materials,Shanghai 201616,China;Shanghai Sinyang Semiconductor Materials Co.,Ltd.,Shanghai 201616,China)

机构地区：[1]上海市集成电路关键工艺重点实验室,上海201616 [2]上海新阳半导体材料股份有限公司,上海201616

出　　处：《电镀与精饰》2024年第10期42-49,共8页Plating & Finishing

摘　　要：针对硅通孔(TSV)高深宽比微孔电镀填铜后结晶细小,后续制程经历高温过程可能导致晶界间缺陷的问题,对TSV电镀铜膜层退火后性能变化进行了研究。考察了退火温度和升温速率等退火条件对晶粒晶面取向、晶粒大小、晶界间空洞以及杂质含量等膜层性能的影响,确定了较优的退火工艺参数为升温速率10/min℃,400℃下保温2 h。结果表明:此较优的高温退火条件下,XRD显示主晶面择优取向为Cu(111);SIMS分析电镀铜膜层总杂质含量小于100 mg·kg^(–1);EBSD结果显示电镀铜平均粒径1.9μm,晶粒长大较充分,满足工业化应用需求,希望对工业化应用提供参考。In order to solve the problem that the small crystal size after copper filling in through-silicon via(TSV)high aspect ratio via microhole electroplating,which may lead to grain boundary defects after high temperature process,the properties of TSV electroplated copper film after annealing were studied.The effects of annealing conditions such as annealing temperature and heating rate on the grain plane orientation,grain size,grain boundary micro void,and impurity content of the film were investigated.The optimal annealing process parameters were determined to be a heating rate of 10/mi℃n and a holding time of 2 h at 400.The results indicate that under these optimal high℃-temperature annealing conditions,XRD results show that the preferred orientation of the main crystal plane is Cu(111).SIMS analysis shows that the total impurity content of the electroplated copper film is less than 100 mg·kg^(–1).EBSD results show that the average particle size of electroplated copper is 1.9μm.The grain growth is sufficient to meet the needs of industrial applications,which would provide reference for industrial applications.

关 键 词：硅通孔 电镀铜 添加剂 退火 缺陷 化学机械抛光 可靠性 

分 类 号：TQ153.1[化学工程—电化学工业]